No. |
Part Name |
Description |
Manufacturer |
31 |
BD243C |
NPN Silicon Power Transistor 65W |
National Semiconductor |
32 |
BD243C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
33 |
BD244 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -55V, 65W. |
General Electric Solid State |
34 |
BD244 |
POWER TRANSISTORS(6A,65W) |
MOSPEC Semiconductor |
35 |
BD244 |
6A complementary silicon 65W power PNP transistor |
Motorola |
36 |
BD244 |
PNP Silicon Power Transistor 65W |
National Semiconductor |
37 |
BD244A |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 65W. |
General Electric Solid State |
38 |
BD244A |
POWER TRANSISTORS(6A,65W) |
MOSPEC Semiconductor |
39 |
BD244A |
6A complementary silicon 65W power PNP transistor |
Motorola |
40 |
BD244A |
PNP Silicon Power Transistor 65W |
National Semiconductor |
41 |
BD244A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
42 |
BD244B |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 65W. |
General Electric Solid State |
43 |
BD244B |
POWER TRANSISTORS(6A,65W) |
MOSPEC Semiconductor |
44 |
BD244B |
PNP Silicon Power Transistor 65W |
National Semiconductor |
45 |
BD244B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
46 |
BD244C |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 65W. |
General Electric Solid State |
47 |
BD244C |
POWER TRANSISTORS(6A,65W) |
MOSPEC Semiconductor |
48 |
BD244C |
PNP Silicon Power Transistor 65W |
National Semiconductor |
49 |
BD244C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
50 |
BD795 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V, 65W. |
General Electric Solid State |
51 |
BD795 |
8A power NPN silicon transistor 65W 45V |
Motorola |
52 |
BD795 |
NPN Silicon DURAWATT™ Power Transistor 65W |
National Semiconductor |
53 |
BD796 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V, 65W. |
General Electric Solid State |
54 |
BD796 |
8A power PNP silicon transistor 65W 45V |
Motorola |
55 |
BD796 |
PNP Silicon DURAWATT™ Power Transistor 65W |
National Semiconductor |
56 |
BD797 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V, 65W. |
General Electric Solid State |
57 |
BD797 |
8A power NPN silicon transistor 65W 60V |
Motorola |
58 |
BD797 |
NPN Silicon DURAWATT™ Power Transistor 65W |
National Semiconductor |
59 |
BD798 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V, 65W. |
General Electric Solid State |
60 |
BD798 |
8A power PNP silicon transistor 65W 60V |
Motorola |
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