No. |
Part Name |
Description |
Manufacturer |
151 |
ASM3P2779AF-08ST |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
152 |
ASM3P2779AF-08TR |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
153 |
ASM3P2779AF-08TT |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
154 |
ASM3P2879AF-06OR |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
155 |
ASM3P2879AF-08SR |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
156 |
ASM3P2879AF-08ST |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
157 |
ASM3P2879AF-08TR |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
158 |
ASM3P2879AF-08TT |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
159 |
BAS79A |
Silicon Switching Diodes |
Infineon |
160 |
BAS79A |
Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
Siemens |
161 |
BAW79A |
Silicon Switching Diodes |
Infineon |
162 |
BAW79A |
Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode) |
Siemens |
163 |
BC179A |
0.600W General Purpose PNP Metal Can Transistor. 20V Vceo, 0.200A Ic, 120 - 200 hFE. |
Continental Device India Limited |
164 |
BC179A |
Silicon PNP Epitaxial Planar AF Transistor |
IPRS Baneasa |
165 |
BC179A |
Si-PLANAR EPITAXIAL-pnp TRANSISTOR h21E=β=90 >40 |
IPRS Baneasa |
166 |
BC179A |
Low frequency transistor |
mble |
167 |
BC179A |
PNP silicon transistor, audio amplification and general purpose |
SESCOSEM |
168 |
BC179A |
Silicon PNP transistor, general purpose |
SESCOSEM |
169 |
BCY79A |
Silicon PNP Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
170 |
BCY79AP |
Switching PNP transistor |
FERRANTI |
171 |
BCY79AP |
General purpose PNP transistor |
FERRANTI |
172 |
BCY79AP |
Low Noise PNP Transistor |
FERRANTI |
173 |
BD679A |
Leaded Power Transistor Darlington |
Central Semiconductor |
174 |
BD679A |
40.000W Darlington NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 750 hFE. Complementary BD680A |
Continental Device India Limited |
175 |
BD679A |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
176 |
BD679A |
Silicon NPN Planar Epitaxial Power Darlington Transistor |
IPRS Baneasa |
177 |
BD679A |
Plastic Medium-Power Silicon NPN Darlingtons |
Motorola |
178 |
BD679A |
Trans Darlington NPN 80V 4A 3-Pin(3+Tab) SOT-32 Tube |
New Jersey Semiconductor |
179 |
BD679A |
Plastic Medium-Power Silicon NPN Darlingtons |
ON Semiconductor |
180 |
BD679A |
Silicon NPN Power Transistors TO-126 package |
Savantic |
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