No. |
Part Name |
Description |
Manufacturer |
91 |
1N979A |
0.5W, silicon zener diode. Zener voltage 56V. Test current 2.2mA. +-10% tolerance. |
Jinan Gude Electronic Device |
92 |
1N979A |
56 V, zener diode |
Leshan Radio Company |
93 |
1N979A |
Zener Voltage Regulator Diode |
Microsemi |
94 |
1N979A |
Zener Voltage Regulator Diode |
Microsemi |
95 |
1N979A |
400mW Zener Diode |
Motorola |
96 |
1N979A |
Zener Diode 56V |
Motorola |
97 |
1N979A |
Diode Zener Single 56V 10% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
98 |
2N1879A |
THYRISTOR |
Motorola |
99 |
2N2079A |
Germanium Power Transistor |
GPD Optoelectronic Devices |
100 |
2N2079A |
PNP germanium power transistor for high-power applications in high-reliability equipment |
Motorola |
101 |
2N2079A |
Germanium PNP Transistor |
Motorola |
102 |
2N2679A |
THYRISTOR |
Motorola |
103 |
2N479A |
Silicon NPN Transistor |
Motorola |
104 |
2N779A |
Germanium PNP Transistor |
Motorola |
105 |
2N779A |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
106 |
2SB1179A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
107 |
2SC3979A |
Power Device - Power Transistors - Swicthing |
Panasonic |
108 |
2SC979A |
Silicon NPN epitaxial planar RF transistor fT=250MHz |
TOSHIBA |
109 |
2SK3079A |
Field Effect Transistor Silicon N Channel MOS Type 470 MHz Band Amplifier Applications |
TOSHIBA |
110 |
2SK679A |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING |
NEC |
111 |
2SK679A-T |
MOS type field effect transistor |
NEC |
112 |
2SK679A-T/JD |
MOS type field effect transistor |
NEC |
113 |
2SK679A-T/JM |
MOS type field effect transistor |
NEC |
114 |
2SK679A/JD |
MOS type field effect transistor |
NEC |
115 |
2SK679A/JM |
MOS type field effect transistor |
NEC |
116 |
74F379A |
Quad register |
Philips |
117 |
82379AB |
SYSTEM I/O APIC(SIO.A) AND |
Intel |
118 |
93479ADC |
-0.5 V to +7 V, 256 x 9-bit static random access memory |
National Semiconductor |
119 |
93479ADMQB |
-0.5 V to +7 V, 256 x 9-bit static random access memory |
National Semiconductor |
120 |
93479ALMQB |
-0.5 V to +7 V, 256 x 9-bit static random access memory |
National Semiconductor |
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