| No. |
Part Name |
Description |
Manufacturer |
| 151 |
STB57N65M5 |
N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh(TM) V Power MOSFET in D2PAK package |
ST Microelectronics |
| 152 |
STD7N60M2 |
N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package |
ST Microelectronics |
| 153 |
STD7N65M2 |
N-channel 650 V, 0.96 Ohm typ., 5 A MDmesh M2 Power MOSFET in a DPAK package |
ST Microelectronics |
| 154 |
STF17N62K3 |
N-channel 620 V, 0.28 Ohm, 15.5 A, TO-220FP SuperMESH3(TM) Power MOSFET |
ST Microelectronics |
| 155 |
STF57N65M5 |
N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh(TM) V Power MOSFET in TO-220FP package |
ST Microelectronics |
| 156 |
STF7N60M2 |
N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package |
ST Microelectronics |
| 157 |
STF7N65M2 |
N-channel 650 V, 0.96 Ohm typ., 5 A MDmesh M2 Power MOSFET in a TO-220FP package |
ST Microelectronics |
| 158 |
STI57N65M5 |
N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh(TM) V Power MOSFET in I2PAK package |
ST Microelectronics |
| 159 |
STL17N65M5 |
N-channel 650 V, 0.338 Ohm typ., 10 A MDmesh(TM) V Power MOSFET in PowerFLAT(TM) 8x8 HV package |
ST Microelectronics |
| 160 |
STL57N65M5 |
N-channel 650 V, 0.061 Ohm typ., 22.5 A MDmesh(TM) V Power MOSFET in a PowerFLAT(TM) 8x8 HV package |
ST Microelectronics |
| 161 |
STP17N62K3 |
N-channel 620 V, 0.28 Ohm, 15.5 A, TO-220 SuperMESH3(TM) Power MOSFET |
ST Microelectronics |
| 162 |
STP57N65M5 |
N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh(TM) V Power MOSFET in TO-220 package |
ST Microelectronics |
| 163 |
STP77N6F6 |
N-channel 60 V, 0.0063 Ohm typ., 77 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a TO-220 package |
ST Microelectronics |
| 164 |
STP7N60M2 |
N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package |
ST Microelectronics |
| 165 |
STP7N65M2 |
N-channel 650 V, 0.96 Ohm typ., 5 A MDmesh M2 Power MOSFET in a TO-220 package |
ST Microelectronics |
| 166 |
STU7N60M2 |
N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK package |
ST Microelectronics |
| 167 |
STU7N65M2 |
N-channel 650 V, 0.96 Ohm typ., 5 A MDmesh M2 Power MOSFET in a IPAK package |
ST Microelectronics |
| 168 |
STW17N62K3 |
N-channel 620 V, 0.28 Ohm, 15.5 A, TO-247 SuperMESH3(TM) Power MOSFET |
ST Microelectronics |
| 169 |
STW57N65M5 |
N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh(TM) V Power MOSFET in TO-247 package |
ST Microelectronics |
| 170 |
STW57N65M5-4 |
N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh(TM) V Power MOSFET in a TO247-4 package |
ST Microelectronics |
| 171 |
STW77N65M5 |
N-channel 650 V, 0.033 Ohm, 69 A, MDmesh(TM) V Power MOSFET TO-247 |
ST Microelectronics |
| 172 |
STWA57N65M5 |
N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh(TM) V Power MOSFET in TO-247 long leads package |
ST Microelectronics |
| 173 |
T2527N630-6AQ |
Low-voltage highly selective IR receiver IC. Carrier frequency 30 kHz. |
Atmel |
| 174 |
T2527N630-DDW |
Low-voltage highly selective IR receiver IC. Carrier frequency 30 kHz. |
Atmel |
| 175 |
T2527N633-6AQ |
Low-voltage highly selective IR receiver IC. Carrier frequency 33 kHz. |
Atmel |
| 176 |
T2527N633-DDW |
Low-voltage highly selective IR receiver IC. Carrier frequency 33 kHz. |
Atmel |
| 177 |
T2527N636-6AQ |
Low-voltage highly selective IR receiver IC. Carrier frequency 36 kHz. |
Atmel |
| 178 |
T2527N636-DDW |
Low-voltage highly selective IR receiver IC. Carrier frequency 36 kHz. |
Atmel |
| 179 |
T2527N638-6AQ |
Low-voltage highly selective IR receiver IC. Carrier frequency 38 kHz. |
Atmel |
| 180 |
T2527N638-DDW |
Low-voltage highly selective IR receiver IC. Carrier frequency 38 kHz. |
Atmel |
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