No. |
Part Name |
Description |
Manufacturer |
91 |
HGTP7N60C3D |
14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
Fairchild Semiconductor |
92 |
HGTP7N60C3D |
14A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
Intersil |
93 |
IRFB17N60K |
600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
94 |
IRFP27N60K |
600V Single N-Channel HEXFET Power MOSFET in a TO-247AC package |
International Rectifier |
95 |
IXGA7N60B |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT |
IXYS |
96 |
IXGA7N60C |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT |
IXYS |
97 |
IXGP7N60B |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT |
IXYS |
98 |
IXGP7N60C |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT |
IXYS |
99 |
KF7N60F |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
100 |
KF7N60P |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
101 |
KF7N65F |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
102 |
KF7N65FM |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
103 |
KF7N65P |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
104 |
KF7N68F |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
105 |
MGP7N60E |
Insulated Gate Bipolar Transistor |
Motorola |
106 |
MGP7N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
107 |
MGP7N60ED |
Insulated Gate Bipolar Transistor withr Anti-Parallel Diode |
ON Semiconductor |
108 |
MGP7N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
109 |
MTP7N60 |
Trans MOSFET N-CH 200V 7A 3-Pin(3+Tab) TO-220 Rail |
New Jersey Semiconductor |
110 |
PC357N6T |
PHOTOCOUPLER |
SHARP |
111 |
PHB7N60E |
PowerMOS transistors Avalanche energy rated |
Philips |
112 |
PHP7N60E |
PowerMOS transistors Avalanche energy rated |
Philips |
113 |
PHW7N60 |
PowerMOS transistor |
Philips |
114 |
PHW7N60E |
PowerMOS transistors Avalanche energy rated |
Philips |
115 |
PHX7N60E |
PowerMOS transistors Avalanche energy rated |
Philips |
116 |
SPA07N60C2 |
for lowest Conduction Losses & fastest Switching |
Infineon |
117 |
SPA07N60C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
118 |
SPA07N65C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
119 |
SPB07N60C2 |
for lowest Conduction Losses & fastest Switching |
Infineon |
120 |
SPB07N60C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
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