No. |
Part Name |
Description |
Manufacturer |
151 |
1N6098 |
Diode Schottky 40V 50A 2-Pin DO-5 |
New Jersey Semiconductor |
152 |
1N6298 |
TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR |
DC Components |
153 |
1N6298 |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
154 |
1N6298 |
130 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
155 |
1N6298 |
TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR |
General Semiconductor |
156 |
1N6298 |
Transient Voltage Suppressor |
Microsemi |
157 |
1N6298 |
Diode TVS Single Uni-Dir 105V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
158 |
1N6298 |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR |
TRSYS |
159 |
1N6298 |
TRANSZORB�Transient Voltage Suppressors |
Vishay |
160 |
1N698 |
Germanium Signal Diode |
Motorola |
161 |
1N798 |
Silicon Planar Diode |
ITT Semiconductors |
162 |
1N798 |
Silicon Signal Diode |
Motorola |
163 |
1N898 |
PELLET DIODES |
Microsemi |
164 |
1N898 |
Silicon Signal Diode |
Motorola |
165 |
1N98 |
Gold Bond Germanium Diode |
ITT Semiconductors |
166 |
1N98 |
Germanium Signal Diode |
Motorola |
167 |
1N98 |
GOLD BONDED GERMANIUM DIODES |
New Jersey Semiconductor |
168 |
1N998 |
Silicon Signal Diode |
Motorola |
169 |
1PMT5298 |
Current Limiter Diode |
Microsemi |
170 |
1S2098 |
DETECTOR, SWITCHING DIODE |
TOSHIBA |
171 |
1S298 |
10 Watt reference diode |
TOSHIBA |
172 |
1S298 |
Zener diode |
TOSHIBA |
173 |
1S298 |
Silicon junction zener diode 10W 105V |
TOSHIBA |
174 |
1S98 |
General-Purpose silicon rectifier 0.3A |
TOSHIBA |
175 |
1SS198 |
Schottky Barrier Diodes for Detection and Mixer |
Hitachi Semiconductor |
176 |
1SS198 |
Diodes>Switching |
Renesas |
177 |
1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications |
TOSHIBA |
178 |
1SS98 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
179 |
1SS98 |
Silicon Mixer Diode |
NEC |
180 |
1SV298 |
pi Type Attenuator Applications |
SANYO |
| | | |