No. |
Part Name |
Description |
Manufacturer |
241 |
2N3898 |
35A silicon controlled rectifier. Vrsom(non-rep) 660V. |
General Electric Solid State |
242 |
2N3898 |
THYRISTOR |
Motorola |
243 |
2N3898 |
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) |
Motorola |
244 |
2N3898 |
Thyristor |
New Jersey Semiconductor |
245 |
2N3898 |
35A Silicon Controlled Rectifier (reverse-blocking triode thyristor) |
RCA Solid State |
246 |
2N398 |
PNP germanium transistor for high-voltage, audio-frequency applications |
Motorola |
247 |
2N398 |
Germanium PNP Transistor |
Motorola |
248 |
2N398 |
Trans GP BJT PNP 105V 0.1A |
New Jersey Semiconductor |
249 |
2N3998 |
NPN Transistor |
Microsemi |
250 |
2N3998 |
Silicon NPN Transistor |
Motorola |
251 |
2N3998 |
Trans GP BJT NPN 80V 5A 4-Pin TO-111 |
New Jersey Semiconductor |
252 |
2N3998 |
Chip Type 2C5154 Geometry 9201 Polarity NPN |
Semicoa Semiconductor |
253 |
2N3998 |
Silicon NPN Power Transistor, TO-111 package |
Silicon Transistor Corporation |
254 |
2N3998 |
NPN Silicon High Power Transistor (over 25 watts) |
Transitron Electronic |
255 |
2N4098 |
THYRISTOR |
Motorola |
256 |
2N4098 |
Reverse Blocking Triode Thyristor-SCR |
Transitron Electronic |
257 |
2N4198 |
Multi-purpose silicon controlled rectifier suited for industrial, consumer, and military applications |
Motorola |
258 |
2N4198 |
THYRISTOR |
Motorola |
259 |
2N4298 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
260 |
2N4298 |
Silicon NPN Transistor |
Motorola |
261 |
2N4298 |
Trans GP BJT NPN 350V 1A |
New Jersey Semiconductor |
262 |
2N4298 |
Silicon NPN Power Transistor, TO-66 (cont d) package, PNP Complement SRSP4298 |
Silicon Transistor Corporation |
263 |
2N4298 |
Silicon NPN Power Transistor, TO-66 (cont d) package, PNP Complement SRSP4298 |
Silicon Transistor Corporation |
264 |
2N4398 |
PNP SILICON HIGH-POWER TRANSISTORS |
Boca Semiconductor Corporation |
265 |
2N4398 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
266 |
2N4398 |
POWER TRANSISTORS(200W) |
MOSPEC Semiconductor |
267 |
2N4398 |
High-power PNP silicon transistor, serves as direct replacements for germanium high-power devices |
Motorola |
268 |
2N4398 |
Silicon PNP Transistor |
Motorola |
269 |
2N4398 |
Trans GP BJT PNP 40V 30A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
270 |
2N4398 |
Silicon PNP Power Transistors TO-3 package |
Savantic |
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