No. |
Part Name |
Description |
Manufacturer |
151 |
BCR135S |
Digital Transistors - R1= 10 kOhm ; R2= 47 kOhm SOT363 |
Infineon |
152 |
BCR135T |
Digital Transistors - R1= 10 kOhm ; R2= 47 kOhm |
Infineon |
153 |
BCR151FE6327 |
Digital Transistors - R1= 100 kOhm ; R2= 100 kOhm |
Infineon |
154 |
BCR151FE6327 |
Digital Transistors - R1= 100 kOhm ; R2= 100 kOhm |
Infineon |
155 |
BCR151L3E6327 |
Digital Transistors - R1= 100 kOhm ; R2= 100 kOhm |
Infineon |
156 |
BCR151L3E6327 |
Digital Transistors - R1= 100 kOhm ; R2= 100 kOhm |
Infineon |
157 |
BCR164FE6327 |
Digital Transistors - R1= 4,7 kOhm ; R2= 10 kOhm |
Infineon |
158 |
BCR164L3E6327 |
Digital Transistors - R1= 4,7 kOhm ; R2= 10 kOhm |
Infineon |
159 |
BCR179E6327 |
Digital Transistors - R1= 10 kOhm |
Infineon |
160 |
BCR179FE6327 |
Digital Transistors - R1= 10 kOhm ; R2= - kOhm |
Infineon |
161 |
BCR179L3E6327 |
Digital Transistors - R1= 10 kOhm |
Infineon |
162 |
BCR183 |
Digital Transistors - R1= 10 kOhm ; R2= 10 kOhm |
Infineon |
163 |
BCR183 |
Digital Transistors - R1= 10 kOhm ; R2= 10 kOhm |
Infineon |
164 |
BCR183FE6327 |
Digital Transistors - R1= 10 kOhm ; R2= 10 kOhm |
Infineon |
165 |
BCR183FE6327 |
Digital Transistors - R1= 10 kOhm ; R2= 10 kOhm |
Infineon |
166 |
BCR183L3E6327 |
Digital Transistors - R1= 10 kOhm ; R2= 10 kOhm |
Infineon |
167 |
BCR183L3E6327 |
Digital Transistors - R1= 10 kOhm ; R2= 10 kOhm |
Infineon |
168 |
BCR183W |
Digital Transistors - R1= 10 kOhm ; R2= 10 kOhm |
Infineon |
169 |
BCR183W |
Digital Transistors - R1= 10 kOhm ; R2= 10 kOhm |
Infineon |
170 |
BCR185 |
Digital Transistors - R1= 10 kOhm ; R2= 47 kOhm |
Infineon |
171 |
BCR185FE6327 |
Digital Transistors - R1= 10 kOhm ; R2= 47 kOhm |
Infineon |
172 |
BCR185L3E6327 |
Digital Transistors - R1= 10 kOhm ; R2= 47 kOhm |
Infineon |
173 |
BCR185W |
Digital Transistors - R1= 10 kOhm ; R2= 47 kOhm |
Infineon |
174 |
BD241C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
175 |
BD242C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
176 |
BD243C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
177 |
BD243C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
178 |
BD244C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
179 |
BD244C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
180 |
BF457 |
10.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
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