| No. |
Part Name |
Description |
Manufacturer |
| 91 |
2214-800G |
20-TAP DIP DELAY LINE TD/TR = 10 (SERIES 2214) |
Data Delay Devices Inc |
| 92 |
2214-80A |
20-TAP DIP DELAY LINE TD/TR = 10 (SERIES 2214) |
Data Delay Devices Inc |
| 93 |
2214-80B |
20-TAP DIP DELAY LINE TD/TR = 10 (SERIES 2214) |
Data Delay Devices Inc |
| 94 |
2214-80C |
20-TAP DIP DELAY LINE TD/TR = 10 (SERIES 2214) |
Data Delay Devices Inc |
| 95 |
2N3055 |
High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. |
USHA India LTD |
| 96 |
2N5320 |
10.000W Switching NPN Metal Can Transistor. 75V Vceo, 2.000A Ic, 30 - 130 hFE. |
Continental Device India Limited |
| 97 |
2N5321 |
10.000W Switching NPN Metal Can Transistor. 50V Vceo, 2.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
| 98 |
2N5679 |
10.000W High Voltage PNP Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 99 |
2N5680 |
10.000W High Voltage PNP Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 100 |
2N5681 |
10.000W High Voltage NPN Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 101 |
2N5682 |
10.000W High Voltage NPN Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 102 |
2N6740 |
100.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 8.000A Ic, 10 - 40 hFE. |
Continental Device India Limited |
| 103 |
2SA1526 |
NPN Switching Transistor (R1 = 10 kΩ, R2 = 10 kΩ) |
ON Semiconductor |
| 104 |
2SA1526 |
NPN Switching Transistor (R1 = 10 kΩ, R2 = 10 kΩ) |
ON Semiconductor |
| 105 |
74AC821CW |
10-Bit D-Type Flip-Flop with 3-STATE Outputs |
Fairchild Semiconductor |
| 106 |
74ACT821CW |
10-Bit D-Type Flip-Flop with 3-STATE Outputs |
Fairchild Semiconductor |
| 107 |
74ACT821MTC |
10-Bit D-Type Flip-Flop with 3-STATE Outputs |
Fairchild Semiconductor |
| 108 |
74ACT841CW |
10-Bit Transparent Latch with 3-STATE Outputs |
Fairchild Semiconductor |
| 109 |
74F828SCX |
10-Bit Buffer/Line Driver |
Fairchild Semiconductor |
| 110 |
74F841SCX |
10-Bit Transparent Latch |
Fairchild Semiconductor |
| 111 |
78HT210 |
10Vout 2A Wide Input Positive Step-Down ISR |
Texas Instruments |
| 112 |
78HT210WC |
10VOUT 2AMP WIDE INPUT POSITIVE STEP-DOWN ISR |
Texas Instruments |
| 113 |
AD7814 |
10-Bit Digital Temperature Sensor in 6-Lead SOT-23 Data Sheet (Rev E, 08/2004) |
Analog Devices |
| 114 |
AD8228 |
Low Gain Drift Precision Instrumentation Amplifier Fixed G = 10, 100 |
Analog Devices |
| 115 |
BC237 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 45V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 116 |
BC238 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 117 |
BC239 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 118 |
BC460 |
10.000W General Purpose PNP Metal Can Transistor. 40V Vceo, A Ic, 40 - 250 hFE. |
Continental Device India Limited |
| 119 |
BC461 |
10.000W General Purpose PNP Metal Can Transistor. 60V Vceo, A Ic, 40 - 250 hFE. |
Continental Device India Limited |
| 120 |
BC549 |
Transistor. Switching and AF ampplifier. Low noise. Vcbo = 30V, Vceo= 30V, Vebo = 5V, Pc = 500mW, Ic = 100mA. |
USHA India LTD |
| | | |
