| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2SC5938B |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 152 |
2SC6046 |
200mW SMD NPN transistor, maximum rating: 40V Vceo, 600mA Ic, 100 to 300 hFE. |
Isahaya Electronics Corporation |
| 153 |
2SD1447 |
900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SB1035 |
Isahaya Electronics Corporation |
| 154 |
2SD1972 |
2W Lead frame NPN transistor, maximum rating: 60V Vceo, 3A Ic, 250 to 800 hFE. |
Isahaya Electronics Corporation |
| 155 |
2SD2156 |
Silicon NPN Triple-Diffused Planar Type |
Matsushita Electric Works(Nais) |
| 156 |
2SJ125 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -1 to -12 mA Idss. |
Isahaya Electronics Corporation |
| 157 |
2SJ145 |
FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE |
Isahaya Electronics Corporation |
| 158 |
2SJ498 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -0.6 to -12 mA Idss. |
Isahaya Electronics Corporation |
| 159 |
2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss. |
Isahaya Electronics Corporation |
| 160 |
2SK2881 |
For Low Frequency Amplify Application N Channel Junction type Micro(Frame type) |
Isahaya Electronics Corporation |
| 161 |
2SK433 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.6to 12 mA Idss. |
Isahaya Electronics Corporation |
| 162 |
2SK492 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 1 to 12 mA Idss. |
Isahaya Electronics Corporation |
| 163 |
2SK930 |
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE |
Isahaya Electronics Corporation |
| 164 |
33NQ52 |
Detection and mixer point contact diode |
Tesla Elektronicke |
| 165 |
34NQ52 |
Detection and mixer point contact diode |
Tesla Elektronicke |
| 166 |
35NQ52 |
Detection and mixer point contact diode |
Tesla Elektronicke |
| 167 |
36NQ52 |
Noise diode for noise generator |
Tesla Elektronicke |
| 168 |
37NQ52 |
Detection and mixer point contact diode |
Tesla Elektronicke |
| 169 |
38NQ52 |
Subminiature microwave detection diode |
Tesla Elektronicke |
| 170 |
38NQ52A |
Subminiature microwave detection diode |
Tesla Elektronicke |
| 171 |
39NQ52A |
Subminiature microwave detection diode, color white |
Tesla Elektronicke |
| 172 |
39NQ52B |
Subminiature microwave detection diode, color albastru |
Tesla Elektronicke |
| 173 |
39NQ52C |
Subminiature microwave detection diode, color red |
Tesla Elektronicke |
| 174 |
3KB105A |
Triple varicap diode |
Tesla Elektronicke |
| 175 |
3KB105B |
Triple varicap diode |
Tesla Elektronicke |
| 176 |
3KB105G |
Triple varicap diode |
Tesla Elektronicke |
| 177 |
3KB109G |
Triple varicap diode |
Tesla Elektronicke |
| 178 |
3KB113 |
Triple varicap diode KB113 |
Tesla Elektronicke |
| 179 |
3KB205A |
Triple varicap KB205A |
Tesla Elektronicke |
| 180 |
3KB205B |
Triple varicap KB205B |
Tesla Elektronicke |
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