| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2SC3441 |
SILICON NPN EPTAXIAL TRANSISTOR |
Isahaya Electronics Corporation |
| 152 |
2SC3443 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 153 |
2SC3444 |
FOR LOW FREQUENCY POWER AMPLFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 154 |
2SC3580 |
900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 700mA Ic, 150 to 800 hFE. Complementary 2SA1398 |
Isahaya Electronics Corporation |
| 155 |
2SC3581 |
900mW Lead frame NPN transistor, maximum rating: 50V Vceo, 400mA Ic, 90 to 500 hFE. Complementary 2SA1399 |
Isahaya Electronics Corporation |
| 156 |
2SC3728 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 157 |
2SC3928 |
For Low Frequency Amplify Application Sillcon Npn Epitaxial Type (Mini type) |
Isahaya Electronics Corporation |
| 158 |
2SC3928A |
200mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC3928 |
Isahaya Electronics Corporation |
| 159 |
2SC4154 |
150mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 150 to 800 hFE. |
Isahaya Electronics Corporation |
| 160 |
2SC4155 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 161 |
2SC4155A |
150mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC4155 |
Isahaya Electronics Corporation |
| 162 |
2SC4258 |
FOR HIGH FREQUENCY, MEDIUM FREQUENCY AMPLIFY APPLICATION |
Isahaya Electronics Corporation |
| 163 |
2SC4356 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 164 |
2SC4357 |
500mW SMD NPN transistor, maximum rating: 60V Vceo, 2A Ic, 55 to 300 hFE. |
Isahaya Electronics Corporation |
| 165 |
2SC5168 |
SILICON NPN DUAL TRANSISTOR |
Isahaya Electronics Corporation |
| 166 |
2SC5169 |
DUAL TRANSISTOR |
Isahaya Electronics Corporation |
| 167 |
2SC5209 |
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 168 |
2SC5210 |
500mW SMD NPN transistor, maximum rating: 250V Vceo, 100mA Ic, 55 to 230 hFE. |
Isahaya Electronics Corporation |
| 169 |
2SC5211 |
SILICON NPN TRANSISOR |
Isahaya Electronics Corporation |
| 170 |
2SC5212 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 171 |
2SC5213 |
2SC5213 |
Isahaya Electronics Corporation |
| 172 |
2SC5214 |
For Low Frequency Amplify Application Silicon Npn Epitaxial Type |
Isahaya Electronics Corporation |
| 173 |
2SC5383 |
125mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 150 to 800 hFE. |
Isahaya Electronics Corporation |
| 174 |
2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. |
Isahaya Electronics Corporation |
| 175 |
2SC5395 |
SILICON NPN EPITAXIAL TYPE TRANSISTOR |
Isahaya Electronics Corporation |
| 176 |
2SC5396 |
SILICON NPN EPITAXIAL TYPE TRANSISTOR |
Isahaya Electronics Corporation |
| 177 |
2SC5397 |
Silicon NPN epitaxial planar type |
Isahaya Electronics Corporation |
| 178 |
2SC5398 |
For Llow Frequency Amplifty Application Silicom NPN Epitaxial Type Micro(Frame type) |
Isahaya Electronics Corporation |
| 179 |
2SC5477 |
150mW SMD NPN transistor, maximum rating: 20V Vceo, 50mA Ic, 50 to (typ)148 hFE. High Frequency Amplification |
Isahaya Electronics Corporation |
| 180 |
2SC5482 |
FOR LOW FREQUENCY POWER AMPLIFY APPRICATION SILICON NPN EPITAXIAL TYPE MICRO |
Isahaya Electronics Corporation |
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