No. |
Part Name |
Description |
Manufacturer |
31 |
2N5551S |
High Voltage Transistor |
Korea Electronics (KEC) |
32 |
2N5551SC |
High Voltage Transistor |
Korea Electronics (KEC) |
33 |
2N7000A |
SMOS FET/ Interface and Switching Application |
Korea Electronics (KEC) |
34 |
2N7002A |
SMOS FET/ Interface and Switching Application |
Korea Electronics (KEC) |
35 |
2N7002KA |
N Channel MOSFET ESD Protected 2000V |
Korea Electronics (KEC) |
36 |
2N7002KU |
N Channel MOSFET ESD Protected 2000V |
Korea Electronics (KEC) |
37 |
2NZ70 |
Zener diode for stabilisation |
Tesla Elektronicke |
38 |
2SA1235A |
200mW SMD PNP transistor, maximum rating: -50V Vceo, -200mA Ic, 150 to 500 hFE. Improve on 2SA1235 |
Isahaya Electronics Corporation |
39 |
2SA1266 |
SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE |
Korea Electronics (KEC) |
40 |
2SA1266L |
SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE |
Korea Electronics (KEC) |
41 |
2SA1270 |
Transistors |
Korea Electronics (KEC) |
42 |
2SA1271 |
SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE |
Korea Electronics (KEC) |
43 |
2SA1273 |
Silicon PNP Transistor Epitaxial Planar Type(PCT PROCESS) |
Korea Electronics (KEC) |
44 |
2SA1282 |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
45 |
2SA1282A |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
46 |
2SA1283 |
SILICON PNP 2SA1283 |
Isahaya Electronics Corporation |
47 |
2SA1284 |
900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 |
Isahaya Electronics Corporation |
48 |
2SA1285 |
FOR PRE-DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
49 |
2SA1285A |
FOR PRE-DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
50 |
2SA1286 |
SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
51 |
2SA1287 |
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
52 |
2SA1363 |
500mW SMD PNP transistor, maximum rating: -16V Vceo, -2A Ic, 150 to 800 hFE. Complementary 2SC3443 |
Isahaya Electronics Corporation |
53 |
2SA1364 |
SILICON PNP TRANSISTOR |
Isahaya Electronics Corporation |
54 |
2SA1365 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
55 |
2SA1366 |
150mW SMD PNP transistor, maximum rating: -50V Vceo, -400mA Ic, 90 to 500 hFE. Complementary 2SC3441 |
Isahaya Electronics Corporation |
56 |
2SA1368 |
2SA1368 |
Isahaya Electronics Corporation |
57 |
2SA1369 |
FOR SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
58 |
2SA1398 |
900mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC3580 |
Isahaya Electronics Corporation |
59 |
2SA1399 |
SILICON PNP TRANSISTOR |
Isahaya Electronics Corporation |
60 |
2SA1530A |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
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