| No. |
Part Name |
Description |
Manufacturer |
| 151 |
BC307VI |
PNP silicon transistor, audio amplification and general purpose |
SESCOSEM |
| 152 |
BC308 |
Silicon PNP Epitaxial Planar AF Transistor |
AEG-TELEFUNKEN |
| 153 |
BC308 |
1.000W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120 - 800 hFE |
Continental Device India Limited |
| 154 |
BC308 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 155 |
BC308 |
PNP Low-Power General Purpose Transistor - plastic case |
IPRS Baneasa |
| 156 |
BC308 |
Si-PLANAR EPITAXIAL-pnp TRANSISTOR |
IPRS Baneasa |
| 157 |
BC308 |
Silicon PNP Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
| 158 |
BC308 |
General Purpose Transistor |
Korea Electronics (KEC) |
| 159 |
BC308 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
| 160 |
BC308 |
PNP silicon epitaxial planar transistor |
Mikroelektronikai Vallalat |
| 161 |
BC308 |
Silicon p-n-p low power transistor |
Mullard |
| 162 |
BC308 |
Transistor PNP |
Siemens |
| 163 |
BC308 |
PNP Silicon Transistor for AF pre- and driver stages as well as for universal application |
Siemens |
| 164 |
BC308 |
Epitaxial PNP silicon planar transistor |
TUNGSRAM |
| 165 |
BC308 |
Tranzystor ma�ej cz�stotliwo�ci ma�ej mocy |
Ultra CEMI |
| 166 |
BC308 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 167 |
BC308-92 |
PNP Small Signal Transistor |
National Semiconductor |
| 168 |
BC308A |
Silicon PNP Epitaxial Planar AF Transistor |
AEG-TELEFUNKEN |
| 169 |
BC308A |
1.000W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120 - 220 hFE |
Continental Device India Limited |
| 170 |
BC308A |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 171 |
BC308A |
PNP Low-Power General Purpose Transistor - plastic case |
IPRS Baneasa |
| 172 |
BC308A |
Si-PLANAR EPITAXIAL-pnp TRANSISTOR h21E=β=90 >40 |
IPRS Baneasa |
| 173 |
BC308A |
Silicon PNP Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
| 174 |
BC308A |
Silicon PNP transistor, general purpose |
SESCOSEM |
| 175 |
BC308A |
PNP silicon transistor, audio amplification and general purpose |
SESCOSEM |
| 176 |
BC308A |
PNP Silicon Transistor for AF pre- and driver stages as well as for universal application |
Siemens |
| 177 |
BC308A |
Epitaxial PNP silicon planar transistor |
TUNGSRAM |
| 178 |
BC308A-92 |
PNP Small Signal Transistor |
National Semiconductor |
| 179 |
BC308ABU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 180 |
BC308AP |
General purpose PNP transistor |
FERRANTI |
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