No. |
Part Name |
Description |
Manufacturer |
91 |
BC307BRL1 |
Transistor Silicon PNP |
ON Semiconductor |
92 |
BC307BTA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
93 |
BC307BTF |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
94 |
BC307BTFR |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
95 |
BC307BU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
96 |
BC307BZL1 |
Transistor Silicon PNP |
ON Semiconductor |
97 |
BC307C |
1.000W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 420 - 800 hFE |
Continental Device India Limited |
98 |
BC307C |
Silicon PNP Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
99 |
BC307C |
Amplifier Transistors(PNP) |
Motorola |
100 |
BC307C |
Trans GP BJT PNP 45V 0.1A 3-Pin TO-92 Bulk |
New Jersey Semiconductor |
101 |
BC307C |
Transistor Silicon Plastic PNP |
ON Semiconductor |
102 |
BC307CBU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
103 |
BC307CZL1 |
Amplifier Transistor PNP |
ON Semiconductor |
104 |
BC307P |
General purpose PNP transistor |
FERRANTI |
105 |
BC307VI |
Silicon PNP transistor, general purpose |
SESCOSEM |
106 |
BC307VI |
PNP silicon transistor, audio amplification and general purpose |
SESCOSEM |
107 |
BC308 |
1.000W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120 - 800 hFE |
Continental Device India Limited |
108 |
BC308 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
109 |
BC308 |
Si-PLANAR EPITAXIAL-pnp TRANSISTOR |
IPRS Baneasa |
110 |
BC308 |
Silicon PNP Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
111 |
BC308 |
General Purpose Transistor |
Korea Electronics (KEC) |
112 |
BC308 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
113 |
BC308 |
Silicon p-n-p low power transistor |
Mullard |
114 |
BC308 |
Transistor PNP |
Siemens |
115 |
BC308 |
PNP Silicon Transistor for AF pre- and driver stages as well as for universal application |
Siemens |
116 |
BC308 |
Tranzystor ma�ej cz�stotliwo�ci ma�ej mocy |
Ultra CEMI |
117 |
BC308 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
118 |
BC308A |
1.000W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120 - 220 hFE |
Continental Device India Limited |
119 |
BC308A |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
120 |
BC308A |
Si-PLANAR EPITAXIAL-pnp TRANSISTOR h21E=β=90 >40 |
IPRS Baneasa |
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