| No. |
Part Name |
Description |
Manufacturer |
| 151 |
NTE5929 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 20A. |
NTE Electronics |
| 152 |
NTE5998 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 40A. |
NTE Electronics |
| 153 |
NTE5999 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 40A. |
NTE Electronics |
| 154 |
NTE6042 |
Industrial silicon recfifier. Cathode to case. Max peak repetitive reverse voltage 800V. Max average forward current 60A. |
NTE Electronics |
| 155 |
NTE6043 |
Industrial silicon recfifier. Anode to case. Max peak repetitive reverse voltage 800V. Max average forward current 60A. |
NTE Electronics |
| 156 |
NTE6068 |
Industrial silicon recfifier. Cathode to case. Max peak reverse voltage 800V. Max forward current 70A. |
NTE Electronics |
| 157 |
NTE6069 |
Industrial silicon recfifier. Anode to case. Max peak reverse voltage 800V. Max forward current 70A. |
NTE Electronics |
| 158 |
P600K |
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 800V. Maximum RMS voltage 560V. Maximum DC blocking voltage 800V |
Wing Shing Computer Components |
| 159 |
P600K |
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 800V. Maximum RMS voltage 560V. Maximum DC blocking voltage 800V |
Wing Shing Computer Components |
| 160 |
PBPC806 |
Diode Rectifier Bridge Single 800V 8A 4-Pin Case PBPC-8 Box |
New Jersey Semiconductor |
| 161 |
SAE 800 |
Programmable Single-/Dual-/Triple- Tone Gong IC |
Infineon |
| 162 |
SC246N |
Triac. Silicon bidirectional thyristor. Repetitive peak off-state voltage 800 V. |
Motorola |
| 163 |
SC250N |
Triac. Bidirectional triode thyristor. 15A RMS. Repetitive peak off-state voltage 800 V. |
Motorola |
| 164 |
SC251N |
Triac. Bidirectional triode thyristor. 15A RMS. Repetitive peak off-state voltage 800 V. |
Motorola |
| 165 |
SD1426 |
24V 60W epitaxial silicon NPN planar transistor designed for common base amplifier applications in the 800-960MHz |
SGS Thomson Microelectronics |
| 166 |
SMA4006 |
Surface mount silicon rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 800V. Maximum RMS bridge input voltage 560V. Maximum DC blocking voltage 800V. |
Wing Shing Computer Components |
| 167 |
SMA4006 |
Surface mount silicon rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 800V. Maximum RMS bridge input voltage 560V. Maximum DC blocking voltage 800V. |
Wing Shing Computer Components |
| 168 |
T4120N |
Triac. Silicin bidirectional triode thyristor. 15A RMS. Repetitive peak off-state voltage 800 V. |
Motorola |
| 169 |
T6401N |
Triac. Silicon bidirectional triode thyristor. 30 A RMS. Repetitive peak off-state voltage 800 V. |
Motorola |
| 170 |
T6411N |
Triac. Silicon bidirectional triode thyristor. 30 A RMS. Repetitive peak off-state voltage 800 V. |
Motorola |
| 171 |
T6421N |
Triac. Silicon bidirectional triode thyristor. 30 A RMS. Repetitive peak off-state voltage 800 V. |
Motorola |
| 172 |
TPS65130 |
Adjustable, Dual Output, Positive & Negative 800-mA Switch Boost DC/DC 4x4 QFN-24 for OLED,TFT,CCD |
Texas Instruments |
| 173 |
TPS65130RGER |
Adjustable, Dual Output, Positive & Negative 800-mA Switch Boost DC/DC 4x4 QFN-24 for OLED,TFT,CCD |
Texas Instruments |
| 174 |
TPS65130RGERG4 |
Adjustable, Dual Output, Positive & Negative 800-mA Switch Boost DC/DC 4x4 QFN-24 for OLED,TFT,CCD |
Texas Instruments |
| 175 |
UF208G |
Glass passivated junction ultrafast switching rectifier. Peak reverse voltage 800 V. Average forward current 2.0 A. |
Panjit International Inc |
| 176 |
W08G |
Diode Rectifier Bridge Single 800V 1.5A 4-Pin WOB |
New Jersey Semiconductor |
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