| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N6483 |
Surface Mount Glass Passivated Junction Rectifiers, Forward Current 1.0A, Rev. Voltage 800V |
Vishay |
| 62 |
1N854 |
Rectifier Diode 800V |
Motorola |
| 63 |
1N865 |
Rectifier Diode 800V |
Motorola |
| 64 |
1N876 |
Rectifier Diode 800V |
Motorola |
| 65 |
1N887 |
Rectifier Diode 800V |
Motorola |
| 66 |
1PM8 |
1.2A Single Phase Rectifier Bridge 800V |
IPRS Baneasa |
| 67 |
1S138 |
Diffused silicon diode 800V, color code brown-orange-gray |
Texas Instruments |
| 68 |
20PM8AC |
20A Single Phase Avalanche Controlled Rectifier Bridge 800V |
IPRS Baneasa |
| 69 |
2KBP08 |
Diode Rectifier Bridge Single 800V 2A 4-Pin D-44 |
New Jersey Semiconductor |
| 70 |
2KBP08-1 |
Diode Rectifier Bridge Single 800V 2A 4-Pin Case KBP |
New Jersey Semiconductor |
| 71 |
2KBP08M |
Diode Rectifier Bridge Single 800V 2A 4-Pin Case KBP |
New Jersey Semiconductor |
| 72 |
2SC3804 |
NPN epitaxial planar RF power transistor 13.5V designed for power amplifiers in the 800-900MHz band range |
Mitsubishi Electric Corporation |
| 73 |
3B30L80 |
3A three phase rectifier bridge 800V |
Texas Instruments |
| 74 |
3B60L80 |
6A three phase rectifier bridge 800V |
Texas Instruments |
| 75 |
3N251 |
Diode Rectifier Bridge Single 800V 1.5A 4-Pin Case KBPM |
New Jersey Semiconductor |
| 76 |
3N258 |
Diode Rectifier Bridge Single 800V 2A 4-Pin Case KBPM Rail |
New Jersey Semiconductor |
| 77 |
3PM8 |
30A Single Phase Rectifier Bridge 800V |
IPRS Baneasa |
| 78 |
40HFR80 |
Diode 800V 40A 2-Pin DO-5 |
New Jersey Semiconductor |
| 79 |
AAT2608 |
Single 800mA Switching Converter and Eight-Channel 300mA LDO Regulator |
Skyworks Solutions |
| 80 |
AAT2608INJ-1-T1 |
Single 800mA Switching Converter and Eight-Channel 300mA LDO Regulator |
Skyworks Solutions |
| 81 |
AM108S |
1.0 A silicon miniature single-phase bridge. Max recurrent peak reverse voltage 800 V. |
Comchip Technology |
| 82 |
AM158S |
1.5 A silicon miniature single-phase bridge. Max recurrent peak reverse voltage 800 V. |
Comchip Technology |
| 83 |
BYV26DGP |
Glass Passivated Ultrafast Rectifier, Reverse Voltage 800 to 1000V, Forward Current 1.0A |
Vishay |
| 84 |
BYV26EGP |
Glass Passivated Ultrafast Rectifier, Reverse Voltage 800 to 1000V, Forward Current 1.0A |
Vishay |
| 85 |
C122N |
Silicon controlled rectifier. Reverse blocking triode thyristor. 8 A RMS. Repetitive peak off-state voltage and repetitive peak reverse voltage 800 V. |
Motorola |
| 86 |
DB106 |
Single-phase silicon bridge rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 800V. Maximum RMS bridge input voltage 560V. Maximum DC blocking voltage 800V. |
Wing Shing Computer Components |
| 87 |
DB106 |
Single-phase silicon bridge rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 800V. Maximum RMS bridge input voltage 560V. Maximum DC blocking voltage 800V. |
Wing Shing Computer Components |
| 88 |
FR106G |
1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 800V. |
Jinan Gude Electronic Device |
| 89 |
FR106L |
1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 800V. |
Jinan Gude Electronic Device |
| 90 |
FR806R |
Fast recovery rectifier. Case negative. Maximum recurrent peak reverse voltage 800V. Maximum average forward rectified current 8.0A. |
Bytes |
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