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Datasheets for EMENT-MODE

Datasheets found :: 1084
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |
No. Part Name Description Manufacturer
151 IRF832 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
152 IRF833 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
153 IRF840 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola
154 IRF841 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola
155 IRF842 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola
156 IRF843 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola
157 IRF9521 P-Channel Enhancement-Mode Vertical DMOS Power FETs Supertex Inc
158 IRF9522 P-Channel Enhancement-Mode Vertical DMOS Power FETs Supertex Inc
159 IRF9523 P-Channel Enhancement-Mode Vertical DMOS Power FETs Supertex Inc
160 IRFF110 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.5A. General Electric Solid State
161 IRFF110 N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor. Motorola
162 IRFF111 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A. General Electric Solid State
163 IRFF112 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A. General Electric Solid State
164 IRFF113 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A. General Electric Solid State
165 IRFF113 N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor. Motorola
166 IRFF120 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 6.0A. General Electric Solid State
167 IRFF121 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. General Electric Solid State
168 IRFF122 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. General Electric Solid State
169 IRFF123 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. General Electric Solid State
170 IRFF130 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 8.0A. General Electric Solid State
171 IRFF131 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A. General Electric Solid State
172 IRFF132 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A. General Electric Solid State
173 IRFF133 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A. General Electric Solid State
174 LP0701 P-Channel Enhancement-Mode Lateral MOSFET Supertex Inc
175 LP0701LG P-Channel Enhancement-Mode Lateral MOSFET Supertex Inc
176 LP0701N3 P-Channel Enhancement-Mode Lateral MOSFET Supertex Inc
177 LP0701ND P-Channel Enhancement-Mode Lateral MOSFET Supertex Inc
178 MGA-665P8-BLK GaAs Enhancement-Mode PHEMT 0.5 ? 6 GHz Low Noise Amplifier Agilent (Hewlett-Packard)
179 MGA-665P8-TR1 GaAs Enhancement-Mode PHEMT 0.5 ? 6 GHz Low Noise Amplifier Agilent (Hewlett-Packard)
180 MGA-665P8-TR2 GaAs Enhancement-Mode PHEMT 0.5 ? 6 GHz Low Noise Amplifier Agilent (Hewlett-Packard)


Datasheets found :: 1084
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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