No. |
Part Name |
Description |
Manufacturer |
31 |
2N7108 |
20 V, 70 ohm, N-channel enhancement-mode D-MOS FET switch |
Topaz Semiconductor |
32 |
2N7109 |
20 V, 70 ohm, N-channel enhancement-mode D-MOS FET switch |
Topaz Semiconductor |
33 |
AN0110NA |
100 V, 100 om, N-channel enhancement-mode D-MOS FET 8-channel array |
Topaz Semiconductor |
34 |
AN0120NA |
200 V, 300 om, N-channel enhancement-mode D-MOS FET 8-channel array |
Topaz Semiconductor |
35 |
AN0130NA |
300 V, 300 om, N-channel enhancement-mode D-MOS FET 8-channel array |
Topaz Semiconductor |
36 |
AN0140NA |
400 V, 350 om, N-channel enhancement-mode D-MOS FET 8-channel array |
Topaz Semiconductor |
37 |
BS107 |
Enhancement-Mode MOSFET Transistors |
Vishay |
38 |
BS170 |
N-Channel Enhancement-Mode MOS Transistor |
Calogic |
39 |
BS170 |
Enhancement-Mode MOSFET Transistors |
Vishay |
40 |
BS170L |
N-Channel Enhancement-Mode MOS Transistor |
Calogic |
41 |
BS250 |
Enhancement-Mode MOSFET Transistors |
Vishay |
42 |
BSS92 |
Enhancement-Mode MOSFET Transistors |
Vishay |
43 |
CMPDM7002A |
N-CHANNEL ENHANCEMENT-MODE SURFACE MOUNT MOSFET |
Central Semiconductor |
44 |
CMXDM7002A |
DUAL N-CHANNEL ENHANCEMENT-MODE SURFACE MOUNT MOSFET |
Central Semiconductor |
45 |
GFB50N03 |
N-Channel Enhancement-Mode MOSFET |
General Semiconductor |
46 |
GFB70N03 |
N-Channel Enhancement-Mode MOSFET |
General Semiconductor |
47 |
GFP70N03 |
N-Channel Enhancement-Mode MOSFET |
General Semiconductor |
48 |
IRF120 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. |
General Electric Solid State |
49 |
IRF121 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. |
General Electric Solid State |
50 |
IRF122 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. |
General Electric Solid State |
51 |
IRF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A. |
General Electric Solid State |
52 |
IRF130 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 56A. |
General Electric Solid State |
53 |
IRF131 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 56A. |
General Electric Solid State |
54 |
IRF132 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A. |
General Electric Solid State |
55 |
IRF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 48A. |
General Electric Solid State |
56 |
IRF150 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 40A. |
General Electric Solid State |
57 |
IRF151 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 40A. |
General Electric Solid State |
58 |
IRF152 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 33A. |
General Electric Solid State |
59 |
IRF153 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 33A. |
General Electric Solid State |
60 |
IRF220 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
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