| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2N5088 |
Small Signal Amplifier NPN |
ON Semiconductor |
| 152 |
2N5088 |
Small Signal Amplifier NPN |
ON Semiconductor |
| 153 |
2N5088RLRA |
Small Signal Amplifier NPN |
ON Semiconductor |
| 154 |
2N5088RLRA |
Small Signal Amplifier NPN |
ON Semiconductor |
| 155 |
2N5089 |
Small Signal Amplifier NPN |
ON Semiconductor |
| 156 |
2N5089RLRA |
Small Signal Amplifier NPN |
ON Semiconductor |
| 157 |
2N5089RLRE |
Small Signal Amplifier NPN |
ON Semiconductor |
| 158 |
2N5148 |
Medium Power NPN Transistor |
National Semiconductor |
| 159 |
2N5150 |
Medium Power NPN Transistor |
National Semiconductor |
| 160 |
2N5191 |
40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
| 161 |
2N5191 |
MEDIUM POWER NPN SILICON TRANSISTORS |
SGS Thomson Microelectronics |
| 162 |
2N5191 |
MEDIUM POWER NPN SILICON TRANSISTORS |
ST Microelectronics |
| 163 |
2N5192 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 7 hFE. |
Continental Device India Limited |
| 164 |
2N5192 |
MEDIUM POWER NPN SILICON TRANSISTORS |
SGS Thomson Microelectronics |
| 165 |
2N5192 |
MEDIUM POWER NPN SILICON TRANSISTORS |
ST Microelectronics |
| 166 |
2N5225 |
Medium power NPN silicon amplifier transistor |
ITT Semiconductors |
| 167 |
2N5294 |
36.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 168 |
2N5294 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 169 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 170 |
2N5296 |
36.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 171 |
2N5296 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 172 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 173 |
2N5298 |
36.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
| 174 |
2N5298 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 175 |
2N5301 |
High-power NPN silicon transistor |
Motorola |
| 176 |
2N5302 |
High-power NPN silicon transistor |
Motorola |
| 177 |
2N5302 |
High-Power NPN Silicon Transistor |
ON Semiconductor |
| 178 |
2N5302-D |
High-Power NPN Silicon Transistor |
ON Semiconductor |
| 179 |
2N5303 |
High-power NPN silicon transistor |
Motorola |
| 180 |
2N5336 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
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