| No. |
Part Name |
Description |
Manufacturer |
| 91 |
2N5089 |
Small Signal Amplifier NPN |
ON Semiconductor |
| 92 |
2N5089RLRA |
Small Signal Amplifier NPN |
ON Semiconductor |
| 93 |
2N5089RLRE |
Small Signal Amplifier NPN |
ON Semiconductor |
| 94 |
2N5191 |
40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
| 95 |
2N5191 |
MEDIUM POWER NPN SILICON TRANSISTORS |
SGS Thomson Microelectronics |
| 96 |
2N5191 |
MEDIUM POWER NPN SILICON TRANSISTORS |
ST Microelectronics |
| 97 |
2N5192 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 7 hFE. |
Continental Device India Limited |
| 98 |
2N5192 |
MEDIUM POWER NPN SILICON TRANSISTORS |
SGS Thomson Microelectronics |
| 99 |
2N5192 |
MEDIUM POWER NPN SILICON TRANSISTORS |
ST Microelectronics |
| 100 |
2N5225 |
Medium power NPN silicon amplifier transistor |
ITT Semiconductors |
| 101 |
2N5294 |
36.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 102 |
2N5294 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 103 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 104 |
2N5296 |
36.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 105 |
2N5296 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 106 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 107 |
2N5298 |
36.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
| 108 |
2N5298 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 109 |
2N5301 |
High-power NPN silicon transistor |
Motorola |
| 110 |
2N5302 |
High-power NPN silicon transistor |
Motorola |
| 111 |
2N5302 |
High-Power NPN Silicon Transistor |
ON Semiconductor |
| 112 |
2N5302-D |
High-Power NPN Silicon Transistor |
ON Semiconductor |
| 113 |
2N5303 |
High-power NPN silicon transistor |
Motorola |
| 114 |
2N5336 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 115 |
2N5337 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 116 |
2N5338 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 117 |
2N5339 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 118 |
2N5427 |
Medium-power NPN silicon transistor |
Motorola |
| 119 |
2N5428 |
Medium-power NPN silicon transistor |
Motorola |
| 120 |
2N5429 |
Medium-power NPN silicon transistor |
Motorola |
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