| No. |
Part Name |
Description |
Manufacturer |
| 151 |
5962F9689104VXC |
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
| 152 |
5962F9689104VXX |
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
| 153 |
5962F9689104VYA |
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
| 154 |
5962F9689104VYC |
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
| 155 |
5962F9689104VYX |
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
| 156 |
AM53CF94/AM53CF96 |
Enhanced SCSI-2 Controller (ESC) |
Advanced Micro Devices |
| 157 |
AM53CF96 |
Enhanced SCSI-2 Controller (ESC) |
Advanced Micro Devices |
| 158 |
AM53CF96 |
Enhanced SCSI-2 Controller (ESC) |
Advanced Micro Devices |
| 159 |
AM53CF96JC |
Enhanced SCSI-2 Controller (ESC) |
Advanced Micro Devices |
| 160 |
AM53CF96JCW |
Enhanced SCSI-2 Controller (ESC) |
Advanced Micro Devices |
| 161 |
AM53CF96KC |
Enhanced SCSI-2 Controller (ESC) |
Advanced Micro Devices |
| 162 |
AM53CF96KCW |
Enhanced SCSI-2 Controller (ESC) |
Advanced Micro Devices |
| 163 |
BF960 |
N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE.DEPLETION MODE |
Vishay |
| 164 |
BF961 |
Dual gate, discharge mode, MOS field controlled tetrode |
Mikroelektronikai Vallalat |
| 165 |
BF961 |
Trans RF MOSFET N-CH 20V 0.03A 4-Pin TO-50 |
New Jersey Semiconductor |
| 166 |
BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
TEMIC |
| 167 |
BF961 |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 168 |
BF961A |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 169 |
BF961B |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 170 |
BF964 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 171 |
BF964S |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 172 |
BF966S |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 173 |
BF967 |
PNP SILICON PLANAR TRANSISTOR |
Siemens |
| 174 |
BF968 |
PNP SILICON PLANAR TRANSISTOR |
Siemens |
| 175 |
CC2533F96RHAR |
A True System-on-Chip Solution for 2.4-GHz IEEE 802.15.4 and ZigBee Applications 40-VQFN -40 to 125 |
Texas Instruments |
| 176 |
CC2533F96RHAT |
A True System-on-Chip Solution for 2.4-GHz IEEE 802.15.4 and ZigBee Applications 40-VQFN -40 to 125 |
Texas Instruments |
| 177 |
ERJL03UF96MV |
Current Sensing Chip Resistors Thick Film Type |
Panasonic |
| 178 |
ERJL06UF96MV |
Current Sensing Chip Resistors Thick Film Type |
Panasonic |
| 179 |
ERJL08UF96MV |
Current Sensing Chip Resistors Thick Film Type |
Panasonic |
| 180 |
ERJL12UF96MU |
Current Sensing Chip Resistors Thick Film Type |
Panasonic |
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