| No. |
Part Name |
Description |
Manufacturer |
| 181 |
ERJL14UF96MU |
Current Sensing Chip Resistors Thick Film Type |
Panasonic |
| 182 |
ERJL1DUF96MU |
Current Sensing Chip Resistors Thick Film Type |
Panasonic |
| 183 |
ERJL1WUF96MU |
Current Sensing Chip Resistors Thick Film Type |
Panasonic |
| 184 |
IRF9610 |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 185 |
IRF9610 |
P-Channel Power MOSFET |
Samsung Electronic |
| 186 |
IRF9610S |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 187 |
IRF9610STRL |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 188 |
IRF9610STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 189 |
IRF9611 |
P-Channel Power MOSFET |
Samsung Electronic |
| 190 |
IRF9612 |
P-Channel Power MOSFET |
Samsung Electronic |
| 191 |
IRF9613 |
P-Channel Power MOSFET |
Samsung Electronic |
| 192 |
IRF9620 |
3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET |
Fairchild Semiconductor |
| 193 |
IRF9620 |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 194 |
IRF9620 |
3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET |
Intersil |
| 195 |
IRF9620 |
P-Channel Power MOSFET |
Samsung Electronic |
| 196 |
IRF9620 |
MOSPOWER P-Channel Enhancement Mode Transistor 200V 3.5A |
Siliconix |
| 197 |
IRF9620S |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 198 |
IRF9620STRL |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 199 |
IRF9620STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 200 |
IRF9621 |
P-Channel Power MOSFET |
Samsung Electronic |
| 201 |
IRF9621 |
MOSPOWER P-Channel Enhancement Mode Transistor 150V 3.5A |
Siliconix |
| 202 |
IRF9622 |
P-Channel Power MOSFET |
Samsung Electronic |
| 203 |
IRF9622 |
MOSPOWER P-Channel Enhancement Mode Transistor 200V 3A |
Siliconix |
| 204 |
IRF9623 |
P-Channel Power MOSFET |
Samsung Electronic |
| 205 |
IRF9623 |
MOSPOWER P-Channel Enhancement Mode Transistor 150V 3A |
Siliconix |
| 206 |
IRF9630 |
6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs |
Fairchild Semiconductor |
| 207 |
IRF9630 |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 208 |
IRF9630 |
6.5A/ 200V/ 0.800 Ohm/ P-Channel Power MOSFETs |
Intersil |
| 209 |
IRF9630 |
200 V, P-channel power MOSFET |
Samsung Electronic |
| 210 |
IRF9630 |
MOSPOWER P-Channel Enhancement Mode Transistor 200V 6.5A |
Siliconix |
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