No. |
Part Name |
Description |
Manufacturer |
151 |
2SB992 |
Silicon PNP triple diffused high current switching power transistor, complementary to 2SD1362 |
TOSHIBA |
152 |
2SB993 |
Silicon PNP triple diffused high current switching power transistor |
TOSHIBA |
153 |
2SC2750 |
High Speed High Current Switching Industrial Use |
Unknow |
154 |
2SC3074 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Current Switching Applications |
TOSHIBA |
155 |
2SC3239 |
Silicon NPN epitaxial high current switching transistor |
TOSHIBA |
156 |
2SC3303 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Current Switching Applications DC-DC Converter Applications |
TOSHIBA |
157 |
2SC3308 |
Silicon NPN epitaxial high current switching transistor |
TOSHIBA |
158 |
2SC3346 |
Silicon NPN Epitaxial Type / High Current Switching Applications |
TOSHIBA |
159 |
2SC3440 |
HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
160 |
2SC3443 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
161 |
2SC3709 |
NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS) |
TOSHIBA |
162 |
2SC3709A |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
163 |
2SC3710 |
NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS) |
TOSHIBA |
164 |
2SC3710A |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
165 |
2SC3728 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
166 |
2SC4356 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
167 |
2SC4881 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE. HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
168 |
2SC5076 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS). HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
169 |
2SC5175 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE. HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
170 |
2SC5176 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS. |
TOSHIBA |
171 |
2SC5212 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
172 |
2SC5485 |
FOR HIGH CURRENT APPLICATION SILICON NPN EPITAXIAL TYPE MICRO |
Isahaya Electronics Corporation |
173 |
2SC5706 |
NPN Epitaxial Planar Silicon Transistors High Current Switching Applications |
SANYO |
174 |
2SC5707 |
High Current Switching Applications |
SANYO |
175 |
2SD1049 |
TRIPLE DIFFUSED PLANER TYPE HIGH CURRENT HIGH SPEED SWITCHING |
Fuji Electric |
176 |
2SD1087 |
Silicon NPN triple diffused darlington power high current switching transistor |
TOSHIBA |
177 |
2SD1162 |
NPN silicon triple diffused darlington transistor, high current, high current switching |
NEC |
178 |
2SD1162 |
NPN silicon triple diffused darlington transistor, high current, high current switching |
NEC |
179 |
2SD1247 |
High Current Switching Transistor |
ON Semiconductor |
180 |
2SD1348 |
High Current Switching Transistor |
ON Semiconductor |
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