| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2SK2038 |
N CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING APPLICATIONS) |
TOSHIBA |
| 212 |
2SK277 |
N-Channel Power MOS FET, high voltage, high current and high speed switching |
NEC |
| 213 |
2SK278 |
N-Channel Power MOS FET, high voltage, high current and high speed switching |
NEC |
| 214 |
2SK2885 |
N CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING/ CHOPPER REGULATOR/ DC-DC CONVERTERAND AND MOTOR DRIVE APPLICATIONS) |
TOSHIBA |
| 215 |
3571AM |
High Current - High Power OPERATIONAL AMPLIFIERS |
Burr Brown |
| 216 |
3572AM |
High Current - High Power OPERATIONAL AMPLIFIERS |
Burr Brown |
| 217 |
3573AM |
High Current - High Power Operational Amplifier |
Burr Brown |
| 218 |
3583 |
High Voltage, High Current OPERATIONAL AMPLIFIER |
Burr Brown |
| 219 |
3583AM |
High Voltage, High Current OPERATIONAL AMPLIFIER |
Burr Brown |
| 220 |
3583JM |
High Voltage, High Current OPERATIONAL AMPLIFIER |
Burr Brown |
| 221 |
37DP4 |
Silicon signal diode - high current switching |
SESCOSEM |
| 222 |
50S116T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
| 223 |
50S116T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
| 224 |
50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
| 225 |
54S416T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
| 226 |
54S416T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
| 227 |
54S416T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
| 228 |
5518 |
High Current RF Chokes |
JW Miller |
| 229 |
5962-0152001QPA |
Complementary High Current MOSFET Driver 8-CDIP -55 to 125 |
Texas Instruments |
| 230 |
5962-0152001VPA |
Complementary High Current MOSFET Driver |
Texas Instruments |
| 231 |
5962-0152001VXA |
Complementary High Current MOSFET Driver |
Texas Instruments |
| 232 |
5962-89611012A |
High Speed MOSFET Drivers with Current Limit 20-LCCC -55 to 125 |
Texas Instruments |
| 233 |
5962-8961101EA |
High Speed MOSFET Drivers with Current Limit |
Texas Instruments |
| 234 |
5962-9583901Q2A |
LOW DROPOUT PNP, HIGH CURRENT VOLTAGE REGULATORS WITH SHUTDOWN |
Texas Instruments |
| 235 |
5962-9583901QPA |
LOW DROPOUT PNP, HIGH CURRENT VOLTAGE REGULATORS WITH SHUTDOWN |
Texas Instruments |
| 236 |
5962-9584001Q2A |
LOW DROPOUT PNP, HIGH CURRENT VOLTAGE REGULATOR WITH SHUTDOWN |
Texas Instruments |
| 237 |
5962-9584001QPA |
LOW DROPOUT PNP, HIGH CURRENT VOLTAGE REGULATOR WITH SHUTDOWN |
Texas Instruments |
| 238 |
75460PC |
Dual High voltage high current peripheral driver |
TUNGSRAM |
| 239 |
80N60B |
High Current IGBT |
IXYS Corporation |
| 240 |
A223 |
EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT SWITCHING/ INTERFACE CIRCUIT AND DRIVER CIRCUIT) |
Korea Electronics (KEC) |
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