No. |
Part Name |
Description |
Manufacturer |
151 |
HM514260LTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
152 |
HM514260LTT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
153 |
HM514260LZP-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
154 |
HM514260LZP-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
155 |
HM514260LZP-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
156 |
HM514260TT-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
157 |
HM514260TT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
158 |
HM514260TT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
159 |
HM514260ZP-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
160 |
HM514260ZP-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
161 |
HM514260ZP-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
162 |
HM514400A/AL/ASL SERIES |
1,048,576-word x 4-bit Dynamic RAM |
Hitachi Semiconductor |
163 |
HM514400AJ-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
164 |
HM514400AJ-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
165 |
HM514400AJ-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
166 |
HM514400ALJ-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
167 |
HM514400ALJ-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
168 |
HM514400ALJ-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
169 |
HM514400ALR-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
170 |
HM514400ALR-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
171 |
HM514400ALR-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
172 |
HM514400ALRR-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
173 |
HM514400ALRR-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
174 |
HM514400ALRR-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
175 |
HM514400ALS-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
176 |
HM514400ALS-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
177 |
HM514400ALS-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
178 |
HM514400ALT-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
179 |
HM514400ALT-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
180 |
HM514400ALT-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
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