No. |
Part Name |
Description |
Manufacturer |
211 |
HM514400ASLT-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
212 |
HM514400ASLT-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
213 |
HM514400ASLT-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
214 |
HM514400ASLTT-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
215 |
HM514400ASLTT-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
216 |
HM514400ASLTT-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
217 |
HM514400ASLZ-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
218 |
HM514400ASLZ-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
219 |
HM514400ASLZ-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
220 |
HM514400AT-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
221 |
HM514400AT-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
222 |
HM514400AT-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
223 |
HM514400ATT-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
224 |
HM514400ATT-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
225 |
HM514400ATT-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
226 |
HM514400ATZ-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
227 |
HM514400ATZ-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
228 |
HM514400ATZ-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
229 |
HM514400AZ-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
230 |
HM514400AZ-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
231 |
HM514400AZ-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
232 |
HM514400B |
1/048/576-word X 4-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
233 |
HM514400BL |
1/048/576-word X 4-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
234 |
HM514400BLS-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
235 |
HM514400BLS-7 |
1,048,576-word x 4-bit dynamic random access memory, 70ns |
Hitachi Semiconductor |
236 |
HM514400BLS-8 |
1,048,576-word x 4-bit dynamic random access memory, 80ns |
Hitachi Semiconductor |
237 |
HM514400BLTT-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
238 |
HM514400BLTT-7 |
1,048,576-word x 4-bit dynamic random access memory, 70ns |
Hitachi Semiconductor |
239 |
HM514400BLTT-8 |
1,048,576-word x 4-bit dynamic random access memory, 80ns |
Hitachi Semiconductor |
240 |
HM514400BLZ-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
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