| No. |
Part Name |
Description |
Manufacturer |
| 151 |
74273 |
OCTAL POSITIVE EDGE-TRIGGERED D-TYPE FLIP FLOP WITH RESET |
Mitsubishi Electric Corporation |
| 152 |
74LS |
OCTAL BUFFER/LINE DRIVERS WITH 3-STATE OUTPUT(NONINVERTED) |
Mitsubishi Electric Corporation |
| 153 |
74LS244 |
OCTAL BUFFER/LINE DRIVERS WITH 3-STATE OUTPUT(NONINVERTED) |
Mitsubishi Electric Corporation |
| 154 |
74LS273 |
OCTAL POSITIVE EDGE-TRIGGERED D-TYPE FLIP FLOP WITH RESET |
Mitsubishi Electric Corporation |
| 155 |
7531 GROUP |
Single Chip 8-Bit CMOS Microcomputer |
Mitsubishi Electric Corporation |
| 156 |
7531 GROUP |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
| 157 |
BA01202 |
GaAs HBT HYBRID IC |
Mitsubishi Electric Corporation |
| 158 |
BA01203 |
GaAs HBT HYBRID IC |
Mitsubishi Electric Corporation |
| 159 |
BA01207 |
GaAs HBT HYBRID IC |
Mitsubishi Electric Corporation |
| 160 |
BCR08AM-14 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 161 |
BCR08AM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 162 |
BCR08AM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 163 |
BCR08AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 164 |
BCR08AS-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 165 |
BCR08AS-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 166 |
BCR10CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 167 |
BCR10CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 168 |
BCR10CM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 169 |
BCR10CM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 170 |
BCR10CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 171 |
BCR10CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 172 |
BCR10CS |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 173 |
BCR10PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 174 |
BCR10PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 175 |
BCR10PM |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 176 |
BCR10UM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 177 |
BCR10UM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 178 |
BCR12 |
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 179 |
BCR12CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 180 |
BCR12CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
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