| No. |
Part Name |
Description |
Manufacturer |
| 211 |
BCR16E |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE |
Mitsubishi Electric Corporation |
| 212 |
BCR16HM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 213 |
BCR16HM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 214 |
BCR16PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 215 |
BCR16PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 216 |
BCR16PM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 217 |
BCR16PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 218 |
BCR16UM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 219 |
BCR16UM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 220 |
BCR1AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 221 |
BCR1AM-12 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 222 |
BCR1AM-12 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 223 |
BCR1AM-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 224 |
BCR1AM-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 225 |
BCR20A |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE |
Mitsubishi Electric Corporation |
| 226 |
BCR20A |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE |
Mitsubishi Electric Corporation |
| 227 |
BCR20AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 228 |
BCR20AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 229 |
BCR20AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 230 |
BCR20AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 231 |
BCR20B |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE |
Mitsubishi Electric Corporation |
| 232 |
BCR20B |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE |
Mitsubishi Electric Corporation |
| 233 |
BCR20B-10 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 234 |
BCR20B-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 235 |
BCR20C |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE |
Mitsubishi Electric Corporation |
| 236 |
BCR20C |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE |
Mitsubishi Electric Corporation |
| 237 |
BCR20C-10 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 238 |
BCR20C-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 239 |
BCR20E |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE |
Mitsubishi Electric Corporation |
| 240 |
BCR20E |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE |
Mitsubishi Electric Corporation |
| | | |
