| No. |
Part Name |
Description |
Manufacturer |
| 301 |
BCR3 |
LOW POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 302 |
BCR30 |
MEDIUM POWER USE INSULATED TYPE/ GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 303 |
BCR30AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 304 |
BCR30AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 305 |
BCR30AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 306 |
BCR30AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 307 |
BCR30GM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 308 |
BCR30GM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 309 |
BCR3AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 310 |
BCR3AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 311 |
BCR3AS |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 312 |
BCR3AS |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 313 |
BCR3AS-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 314 |
BCR3AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 315 |
BCR3KM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 316 |
BCR3KM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 317 |
BCR3KM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 318 |
BCR3KM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 319 |
BCR3KM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 320 |
BCR3KM-14 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 321 |
BCR3KM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 322 |
BCR3PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 323 |
BCR3PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 324 |
BCR3PM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 325 |
BCR3PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 326 |
BCR5 |
MEDIUM POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 327 |
BCR5AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 328 |
BCR5AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 329 |
BCR5AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 330 |
BCR5AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
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