| No. |
Part Name |
Description |
Manufacturer |
| 151 |
1N5357B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 152 |
1N5357B |
20 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 153 |
1N5357B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 154 |
1N5358B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 155 |
1N5358B |
22 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 156 |
1N5358B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 157 |
1N5359B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 158 |
1N5359B |
24 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 159 |
1N5359B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 160 |
1N536 |
Diffused-Junction Silicon Rectifier, flanged-case, axial-lead-type |
RCA Solid State |
| 161 |
1N5360B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 162 |
1N5360B |
25 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 163 |
1N5360B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 164 |
1N5361B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 165 |
1N5361B |
27 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 166 |
1N5361B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 167 |
1N5362B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 168 |
1N5362B |
28 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 169 |
1N5362B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 170 |
1N5363B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 171 |
1N5363B |
30 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 172 |
1N5363B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 173 |
1N5364B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 174 |
1N5364B |
33 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 175 |
1N5364B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 176 |
1N5365B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 177 |
1N5365B |
36 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 178 |
1N5365B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 179 |
1N5366B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 180 |
1N5366B |
39 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
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