| No. |
Part Name |
Description |
Manufacturer |
| 211 |
1N5376B |
87 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 212 |
1N5376B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 213 |
1N5377B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 214 |
1N5377B |
91 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 215 |
1N5377B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 216 |
1N5378B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 217 |
1N5378B |
100 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 218 |
1N5378B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 219 |
1N5379B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 220 |
1N5379B |
110 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 221 |
1N5379B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 222 |
1N538 |
Diffused-Junction Silicon Rectifier, flanged-case, axial-lead-type |
RCA Solid State |
| 223 |
1N5380B |
Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 120V, Izt =10mA |
Panjit International Inc |
| 224 |
1N5380B |
120 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 225 |
1N5380B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 226 |
1N5381B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 227 |
1N5381B |
130 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 228 |
1N5381B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 229 |
1N5382B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 230 |
1N5382B |
140 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 231 |
1N5382B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 232 |
1N5383B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 233 |
1N5383B |
150 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 234 |
1N5383B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 235 |
1N5384B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 236 |
1N5384B |
160 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 237 |
1N5384B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 238 |
1N5385B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 239 |
1N5385B |
170 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 240 |
1N5385B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
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