| No. |
Part Name |
Description |
Manufacturer |
| 151 |
APPLICATION NOTE 215A |
RF small signal design using two-port parameters |
Motorola |
| 152 |
APPLICATION NOTE 419 |
UHF amplifier design using data sheet design curves |
Motorola |
| 153 |
BA157 |
Fast silicon universal rectifier diode |
TUNGSRAM |
| 154 |
BA158 |
Fast silicon universal rectifier diode |
TUNGSRAM |
| 155 |
BA159 |
Fast silicon universal rectifier diode |
TUNGSRAM |
| 156 |
BAR63-02V |
PIN Diodes - High-Speed switching diode in ultra-small SC79 Package |
Infineon |
| 157 |
BAR64-02V |
PIN Diodes - RF Switch (High isolation) in ultra-small SC79 Package |
Infineon |
| 158 |
BAR65-02V |
PIN Diodes - Low Loss, Low Capacitance Switch in ultra small SC79 package |
Infineon |
| 159 |
BAR67-02V |
PIN Diodes - Low Loss Switch in ultra_small SC79 Package |
Infineon |
| 160 |
BAT54CV |
Two Schottky barrier double diodes in ultra small SOT666 package |
Philips |
| 161 |
BAT54CV |
BAT54CV; Two Schottky barrier double diodes in ultra small SOT666 package |
Philips |
| 162 |
BAT54VV |
Schottky barrier triple diode in ultra small SOT666 package |
Nexperia |
| 163 |
BAT54VV |
Schottky barrier triple diode in ultra small SOT666 package |
NXP Semiconductors |
| 164 |
BAT54VV |
BAT54VV; Schottky barrier triple diode in ultra small SOT666 package |
Philips |
| 165 |
BAT54VV |
Schottky barrier triple diode in ultra small SOT666 package |
Philips |
| 166 |
BAY44 |
Silicon universal diodes in glass case |
Siemens |
| 167 |
BAY45 |
Silicon universal diodes in glass case |
Siemens |
| 168 |
BAY46 |
Silicon universal diodes in glass case |
Siemens |
| 169 |
BBY53-02V |
Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package |
Infineon |
| 170 |
BBY55-02V |
Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package |
Infineon |
| 171 |
BBY57-02V |
Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package |
Infineon |
| 172 |
BBY58-02V |
Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package |
Infineon |
| 173 |
BF569 |
PNP Silicon RF Transistor (fOR OSCILLATORS, MIXERS AND SELF-OSCILLATING MIXER STAGES IN uhf tv TUNERS) |
Siemens |
| 174 |
BF569W |
PNP Silicon RF Transistor (For oscillators, mixer and self-oscillating mixer stages in UHF TV-tuner) |
Siemens |
| 175 |
BF679 |
Epitaxial planar PNP transistor, intended to be used in UHF-VHF range up to 900MHz |
SGS-ATES |
| 176 |
BF679M |
Epitaxial planar PNP transistor, intended to be used in UHF-VHF range up to 900MHz, low thermal drift |
SGS-ATES |
| 177 |
BF799 |
RF-Bipolar - For linear broadband amplifier application up to 500 MHz and as SAW filter driver in TV tuners |
Infineon |
| 178 |
BF799W |
RF-Bipolar - For linear broadband amplifier application up to 500 MHz and as SAW filter driver in TV tuners |
Infineon |
| 179 |
BF996S |
Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure) |
Siemens |
| 180 |
BFG96 |
Silicon planar epitaxial NPN transistor wideband application up to 2GHz |
Philips |
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