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Datasheets for N U

Datasheets found :: 2513
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |
No. Part Name Description Manufacturer
181 BFQ22S Silicon Planar Epitaxial NPN transistor, intended for use in UHF and microwave aerial amplifiers, radar systems, oscilloscopes, spectrum analyses, etc. Philips
182 BFQ23 Silicon wideband PNP transistor, intended for use in UHF and microwave amplifiers, low intermodulation distorsion and high power gain Philips
183 BFQ24 PNP Silicon planar epitaxial transistor, intended for use in UHF and microwave, NPN complement is BFQ22S Philips
184 BFQ32 Silicon planar epitaxial PNP transistor in a subminiature plastic transfer-moulded T-package, intended for use in UHF and microwave Philips
185 BFQ32S Silicon planar epitaxial PNP transistor, intended for use in UHF applications Philips
186 BFQ51C Gold-metallized PNP silicon transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFP90A Philips
187 BFQ52 PNP silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFQ53 Philips
188 BFQ53 NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, PNP complement is BFQ52 Philips
189 BFQ63 NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers Philips
190 BFQ85 Epitaxial planar NPN transistor, intended for common-emitter, high gain, wide band application up to 1.5GHz SGS-ATES
191 BFQ88 Epitaxial planar NPN transistor in µX ceramic package intended for high-gain, wide-band application up to 2GHz SGS-ATES
192 BFQ88A Epitaxial planar NPN transistor in µX ceramic package intended for high-gain, wide-band application up to 2GHz SGS-ATES
193 BFR90B Epitaxial planar NPN transistor, intended for high-gain, wide band, low noise application up to 1,5GHz SGS-ATES
194 BFR91 NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. Philips
195 BFR91A NPN silicon planar epitaxial transistor for use in UHF and microwave amplifiers, low noise, high power gain, gold metallization Philips
196 BFR96 NPN silicon planar epitaxial transistor intended for use in UHF and microwave amplifiers Philips
197 BFT24 NPN transistor, intended for use in UHF low power amplifiers such as in pocket phones, paging systems, etc. Philips
198 BFT65 Low noise NPN UHF transistor Siemens
199 BFT95H Epitaxial planar PNP transistor intended for common-emitter, high-gain wide band application up to 1.5Ghz SGS-ATES
200 BFT96 Epitaxial planar PNP transistor intended for use as driver or output stage in MATV application up to 800MHz SGS-ATES
201 BFY88 Silicon NPN epitaxial planar RF transistor designed for use in UHF amplifier stages, emitter grounded input stages and oscillating mixer stages AEG-TELEFUNKEN
202 BMTX121AN βMTX121AN Ultralow offset voltage precision preamplifier IPRS Baneasa
203 BMTX121N βMTX121N Ultralow offset voltage precision preamplifier IPRS Baneasa
204 BMTX321AN βMTX321AN Ultralow offset voltage precision preamplifier IPRS Baneasa
205 BMTX321CN βMTX321CN Ultralow offset voltage precision preamplifier IPRS Baneasa
206 BMTX321N βMTX321N Ultralow offset voltage precision preamplifier IPRS Baneasa
207 BMTY121AN βMTY121AN Ultralow offset voltage precision preamplifier IPRS Baneasa
208 BMTY121N βMTY121N Ultralow offset voltage precision preamplifier IPRS Baneasa
209 BMTY321AN βMTY321AN Ultralow offset voltage precision preamplifier IPRS Baneasa
210 BMTY321CN βMTY321CN Ultralow offset voltage precision preamplifier IPRS Baneasa


Datasheets found :: 2513
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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