No. |
Part Name |
Description |
Manufacturer |
151 |
2N1613 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
152 |
2N1613 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
153 |
2N1613 |
NPN silicon planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
154 |
2N1613 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
155 |
2N1613 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
156 |
2N1613A |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
157 |
2N1623 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
158 |
2N1654 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
159 |
2N1655 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
160 |
2N1656 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
161 |
2N1692 |
PNP germanium mesa transistor for VHF power amplifier applications |
Motorola |
162 |
2N1693 |
PNP germanium mesa transistor for VHF power amplifier applications |
Motorola |
163 |
2N1705 |
PNP germanium transistor for audio driver applications in transistorized radio receivers |
Motorola |
164 |
2N1706 |
PNP germanium transistor for audio driver applications in transistorized radio receivers |
Motorola |
165 |
2N1707 |
PNP germanium transistor for audio driver applications in transistorized radio receivers |
Motorola |
166 |
2N1711 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
167 |
2N1711 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
168 |
2N1711 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
169 |
2N1711 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
170 |
2N1711A |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
171 |
2N1742 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
172 |
2N1743 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
173 |
2N1744 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
174 |
2N176 |
PNP germanium power transistor for economical power switching circuits and commercial grade power amplifier applications |
Motorola |
175 |
2N178 |
PNP germanium power transistor for non-critical applications requiring economical components |
Motorola |
176 |
2N1889 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
177 |
2N1890 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
178 |
2N1893 |
Silicon NPN planar transistor for high speed switchings |
AEG-TELEFUNKEN |
179 |
2N1893 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
180 |
2N1893 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
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