No. |
Part Name |
Description |
Manufacturer |
31 |
1N5149 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
32 |
1N5150 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
33 |
1N5211 |
Diffused-Junction Silicon Rectifier for industrial and consumer-product |
RCA Solid State |
34 |
1N5212 |
Diffused-Junction Silicon Rectifier for industrial and consumer-product |
RCA Solid State |
35 |
1N5213 |
Diffused-Junction Silicon Rectifier for industrial and consumer-product |
RCA Solid State |
36 |
1N5214 |
Diffused-Junction Silicon Rectifier for industrial and consumer-product |
RCA Solid State |
37 |
1N5215 |
Diffused-Junction Silicon Rectifier for industrial and consumer-product |
RCA Solid State |
38 |
1N5216 |
Diffused-Junction Silicon Rectifier for industrial and consumer-product |
RCA Solid State |
39 |
1N5217 |
Diffused-Junction Silicon Rectifier for industrial and consumer-product |
RCA Solid State |
40 |
1N5218 |
Diffused-Junction Silicon Rectifier for industrial and consumer-product |
RCA Solid State |
41 |
1S1837 |
Silicon diffused junction rectifier, High Voltage Rectifier for Color Television Receivers Application (Doubler Circuits) |
TOSHIBA |
42 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
43 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
44 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
45 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
46 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
47 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
48 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
49 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
50 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
51 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
52 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
53 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
54 |
2-AA113 |
HF germanium diode pair for high-resistance radio detector and discriminator circuits |
TUNGSRAM |
55 |
2-AA116 |
HF germanium diode pair for low resistance radio detector and discriminator circuits |
TUNGSRAM |
56 |
2-AA118 |
HF Germanium tip diode pair for phase discriminator circuits |
TUNGSRAM |
57 |
2-AA119 |
HF germanium tip diode pair for high-resistance ratio detector and discriminator circuits |
TUNGSRAM |
58 |
2001 |
2GHz 1W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
59 |
2003 |
2GHz 3W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
60 |
2005 |
2GHz 5W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| | | |