| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2N3665 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 152 |
2N3700 |
GENERAL TRANSISTOR NPN SILICON |
Boca Semiconductor Corporation |
| 153 |
2N3700S |
LOW POWER NPN SILICON TRANSISTOR |
Microsemi |
| 154 |
2N3716 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 155 |
2N3734 |
Bipolar NPN Device in aHermetically sealed TO39 Metal Package |
SemeLAB |
| 156 |
2N3738 |
Power NPN transistor - High Voltage |
SESCOSEM |
| 157 |
2N3766 |
Medium-Power NPN silicon transistor |
Motorola |
| 158 |
2N3767 |
Medium-Power NPN silicon transistor |
Motorola |
| 159 |
2N3767 |
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package |
SemeLAB |
| 160 |
2N3771 |
HIGH POWER NPN SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 161 |
2N3771 |
High-Power NPN Silicon Transistor |
Motorola |
| 162 |
2N3771 |
HIGH POWER NPN SILICON TRANSISTOR |
SGS Thomson Microelectronics |
| 163 |
2N3771 |
HIGH POWER NPN SILICON TRANSISTOR |
SGS Thomson Microelectronics |
| 164 |
2N3771 |
HIGH POWER NPN SILICON TRANSISTOR |
ST Microelectronics |
| 165 |
2N3771-D |
High Power NPN Silicon Power Transistors |
ON Semiconductor |
| 166 |
2N3772 |
HIGH POWER NPN SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 167 |
2N3772 |
150.000W Power NPN Metal Can Transistor. 60V Vceo, 20.000A Ic, 15 - 60 hFE. |
Continental Device India Limited |
| 168 |
2N3772 |
High-Power NPN Silicon Transistor |
Motorola |
| 169 |
2N3772 |
HIGH POWER NPN SILICON TRANSISTOR |
SGS Thomson Microelectronics |
| 170 |
2N3772 |
HIGH POWER NPN SILICON TRANSISTOR |
SGS Thomson Microelectronics |
| 171 |
2N3772 |
HIGH POWER NPN SILICON TRANSISTOR |
ST Microelectronics |
| 172 |
2N3773 |
150.000W Power NPN Metal Can Transistor. 140V Vceo, 16.000A Ic, 5 hFE. |
Continental Device India Limited |
| 173 |
2N3773 |
High power NPN transistor. High power audio and linear applications. Vceo = 140Vdc, Vcer = 150Vdc, Vcb = 160Vdc, Veb = 7Vdc, Ic = 16Adc, Ib = 4Adc, PD = 150W. |
USHA India LTD |
| 174 |
2N3839 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz, low noise |
SGS-ATES |
| 175 |
2N3866 |
Transmitting transistor NPN |
mble |
| 176 |
2N3866 |
Epitaxial planar NPN transistor designed for VHF-UHF class A, B or C amplifier circuits and oscillator applications |
SGS-ATES |
| 177 |
2N3918 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 178 |
2N3924 |
Transmitting transistor NPN |
mble |
| 179 |
2N3926 |
Transmitting transistor NPN |
mble |
| 180 |
2N3927 |
Transmitting transistor NPN |
mble |
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