No. |
Part Name |
Description |
Manufacturer |
211 |
2N4923 |
30.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
212 |
2N4924 |
Bipolar NPN Device |
SemeLAB |
213 |
2N4925 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
214 |
2N5011 |
Bipolar NPN Device |
SemeLAB |
215 |
2N5012 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
216 |
2N5013 |
Bipolar NPN Device |
SemeLAB |
217 |
2N5015 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
218 |
2N5050 |
2A Medium-Power NPN Silicon Transistor 40W |
Motorola |
219 |
2N5051 |
2A Medium-Power NPN Silicon Transistor 40W |
Motorola |
220 |
2N5052 |
2A Medium-Power NPN Silicon Transistor 40W |
Motorola |
221 |
2N5052 |
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package |
SemeLAB |
222 |
2N5088 |
Small Signal Amplifier NPN |
ON Semiconductor |
223 |
2N5088 |
Small Signal Amplifier NPN |
ON Semiconductor |
224 |
2N5088RLRA |
Small Signal Amplifier NPN |
ON Semiconductor |
225 |
2N5088RLRA |
Small Signal Amplifier NPN |
ON Semiconductor |
226 |
2N5088RLRE |
Amplifier Transistor NPN |
ON Semiconductor |
227 |
2N5089 |
Small Signal Amplifier NPN |
ON Semiconductor |
228 |
2N5089RLRA |
Small Signal Amplifier NPN |
ON Semiconductor |
229 |
2N5089RLRE |
Small Signal Amplifier NPN |
ON Semiconductor |
230 |
2N5095 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
231 |
2N5099 |
Bipolar NPN Device |
SemeLAB |
232 |
2N5109 |
Epitaxial planar NPN transistor, designed for CATV-MATV amplifier applications over a wide frequency range (40 to 860MHz) |
SGS-ATES |
233 |
2N5148 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
234 |
2N5179 |
Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz |
SGS-ATES |
235 |
2N5191 |
40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
236 |
2N5191 |
MEDIUM POWER NPN SILICON TRANSISTORS |
SGS Thomson Microelectronics |
237 |
2N5191 |
MEDIUM POWER NPN SILICON TRANSISTORS |
ST Microelectronics |
238 |
2N5192 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 7 hFE. |
Continental Device India Limited |
239 |
2N5192 |
MEDIUM POWER NPN SILICON TRANSISTORS |
SGS Thomson Microelectronics |
240 |
2N5192 |
MEDIUM POWER NPN SILICON TRANSISTORS |
ST Microelectronics |
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