| No. |
Part Name |
Description |
Manufacturer |
| 151 |
1N4764 |
SILICON PLANAR POWER ZENER DIODES |
Surge Components |
| 152 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 153 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 154 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 155 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 156 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 157 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 158 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 159 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 160 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 161 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 162 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 163 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 164 |
2B940A |
Silicon PNP epitaxial planar type(For power amplification) |
Panasonic |
| 165 |
2DI200D-100 |
Power transistor module for power switching, AC and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
| 166 |
2DI30Z-100 |
Power transistor module for power switching, AC and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
| 167 |
2DI75Z-100 |
Power transistor module for power switching, Ac and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
| 168 |
2DI75Z-120 |
Power transistor module for power switching, Ac and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
| 169 |
2N2947 |
NPN silicon annular transistor for power amplifier applications to 100MHz |
Motorola |
| 170 |
2N2948 |
NPN silicon annular transistor for power amplifier applications to 100MHz |
Motorola |
| 171 |
2N2949 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-107 case |
Motorola |
| 172 |
2N2950 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-102 case |
Motorola |
| 173 |
2N3298 |
NPN silicon transistor for power oscillator applications to 150 MHz |
Motorola |
| 174 |
2N3664 |
NPN silicon transistor for power amplifier and driver applications to 500MHz |
Motorola |
| 175 |
2N4427 |
VHF OSCILLATOR POWER AMPLIFIER |
ST Microelectronics |
| 176 |
2N5109 |
RF NPN transistor for power UHF amplifier |
IPRS Baneasa |
| 177 |
2N5109A |
RF NPN transistor for power UHF amplifier |
IPRS Baneasa |
| 178 |
2N5109B |
RF NPN transistor for power UHF amplifier |
IPRS Baneasa |
| 179 |
2N5836 |
RF NPN transistor for power UHF amplifier |
IPRS Baneasa |
| 180 |
2N5837 |
RF NPN transistor for power UHF amplifier |
IPRS Baneasa |
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