| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N5942 |
Application Note - Broadband Linear Power Amplifiers using Push-Pull transistors |
Motorola |
| 182 |
2N6412 |
Plastic silicon annular power NPN transistor 15W 4A 40V |
Motorola |
| 183 |
2N6413 |
Plastic silicon annular power NPN transistor 15W 4A 60V |
Motorola |
| 184 |
2N6414 |
Plastic silicon annular power PNP transistor 15W 4A 40V |
Motorola |
| 185 |
2N6415 |
Plastic silicon annular power PNP transistor 15W 4A 60V |
Motorola |
| 186 |
2N6416 |
Plastic silicon annular power NPN transistor 15W 3A 80V |
Motorola |
| 187 |
2N6417 |
Plastic silicon annular power NPN transistor 15W 3A 100V |
Motorola |
| 188 |
2N6418 |
Plastic silicon annular power PNP transistor 15W 3A 80V |
Motorola |
| 189 |
2N6419 |
Plastic silicon annular power PNP transistor 15W 3A 100V |
Motorola |
| 190 |
2N6578 |
NPN BIPOLAR POWER DARLINGTON TRANSISTOR |
SemeLAB |
| 191 |
2SA1094 |
Silicon PNP epitaxial transistor, for power amplifier applications |
TOSHIBA |
| 192 |
2SA1173 |
PNP silicon epitaxial transistor power MINI MOLD |
NEC |
| 193 |
2SA1306B |
1.5 A; 200V; 20W; silicon PNP epitaxial type stransistor. For power amplifier applications, driver stage amplifier applications |
TOSHIBA |
| 194 |
2SA1463 |
HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 195 |
2SA1500 |
For power switching |
Panasonic |
| 196 |
2SA1550 |
For power switching |
Panasonic |
| 197 |
2SA1988 |
PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE |
NEC |
| 198 |
2SB1072(L) |
Bipolar power switching Darlington transistor |
Hitachi Semiconductor |
| 199 |
2SB1072(S) |
Bipolar power switching Darlington transistor |
Hitachi Semiconductor |
| 200 |
2SB1115 |
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 201 |
2SB1115A |
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 202 |
2SB1155 |
Silicon PNP epitaxial planar type(For power switching) |
Panasonic |
| 203 |
2SB1250 |
For power amplification |
Panasonic |
| 204 |
2SB1251 |
For power amplification |
Panasonic |
| 205 |
2SB1253 |
Silicon PNP epitaxial planar type Darlington(For power amplification) |
Panasonic |
| 206 |
2SB1393 |
Silicon PNP epitaxial planar type(For power amplification) |
Panasonic |
| 207 |
2SB1393A |
Silicon PNP epitaxial planar type(For power amplification) |
Panasonic |
| 208 |
2SB1407(L) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 209 |
2SB1407(S) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 210 |
2SB1409(L) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| | | |
