| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2N3821 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 152 |
2N3822 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 153 |
2N3823 |
Silicon N-channel junction field-effect transistor designed for VHF amplifier and mixer applications |
Motorola |
| 154 |
2N3824 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 155 |
2N3839 |
NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers |
Motorola |
| 156 |
2N3866 |
Epitaxial planar NPN transistor designed for VHF-UHF class A, B or C amplifier circuits and oscillator applications |
SGS-ATES |
| 157 |
2N3950 |
NPN silicon RF power transistor designed for high-power RF amplifier applications |
Motorola |
| 158 |
2N3980 |
Silicon annular PN unijunction transistor designed for military and industrial use in pulse, timing, sensing, and oscillator circuits |
Motorola |
| 159 |
2N4012 |
NPN silicon transistor designed for frequency-multiplication applications |
Motorola |
| 160 |
2N4015 |
Leaded Small Signal Transistor Dual |
Central Semiconductor |
| 161 |
2N4015 |
Silicon transistor differential amplifiers |
SGS-ATES |
| 162 |
2N4016 |
Leaded Small Signal Transistor Dual |
Central Semiconductor |
| 163 |
2N4048 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 164 |
2N4049 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 165 |
2N4050 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 166 |
2N4051 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 167 |
2N4052 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 168 |
2N4053 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 169 |
2N4072 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
| 170 |
2N4073 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
| 171 |
2N4264 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
| 172 |
2N4265 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
| 173 |
2N4416 |
Silicon N-channel junction field-effect transistor designed for VHF/UHF amplifier applications |
Motorola |
| 174 |
2N4427 |
Epitaxial planar NPN transistor designed for VHF class A, B or C amplifier and oscillator applications |
SGS-ATES |
| 175 |
2N4428 |
Epitaxial planar NPN transistor designed for VHF-UHF class C amplifier output stages in military an industrial communications applications |
SGS-ATES |
| 176 |
2N4854 |
Leaded Small Signal Transistor Dual |
Central Semiconductor |
| 177 |
2N4924 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 178 |
2N4925 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 179 |
2N4926 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 180 |
2N4927 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
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