No. |
Part Name |
Description |
Manufacturer |
181 |
2N502B |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
182 |
2N5086 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
183 |
2N5087 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
184 |
2N5088 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
185 |
2N5089 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
186 |
2N508A |
PNP Germanium Milliwatt transistor designed for low noise audio and switching applications |
Motorola |
187 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
188 |
2N5306 |
Leaded Small Signal Transistor Darlington |
Central Semiconductor |
189 |
2N5308 |
Leaded Small Signal Transistor Darlington |
Central Semiconductor |
190 |
2N5324 |
PNP germanium power transistor designed for switching, inverter, TV deflection and industrial power supply applications |
Motorola |
191 |
2N5325 |
PNP germanium power transistor designed for switching, inverter, TV deflection and industrial power supply applications |
Motorola |
192 |
2N5336 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
193 |
2N5337 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
194 |
2N5338 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
195 |
2N5339 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
196 |
2N5457 |
Silicon N-channel junction field-effect transistor depletion mode (Type A) |
Motorola |
197 |
2N5458 |
Silicon N-channel junction field-effect transistor depletion mode (Type A) |
Motorola |
198 |
2N5459 |
Silicon N-channel junction field-effect transistor depletion mode (Type A) |
Motorola |
199 |
2N5484 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
200 |
2N5485 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
201 |
2N5486 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
202 |
2N5794 |
Leaded Small Signal Transistor Dual |
Central Semiconductor |
203 |
2N5796 |
Leaded Small Signal Transistor Dual |
Central Semiconductor |
204 |
2N6034 |
Leaded Power Transistor Darlington |
Central Semiconductor |
205 |
2N6035 |
Leaded Power Transistor Darlington |
Central Semiconductor |
206 |
2N6036 |
Leaded Power Transistor Darlington |
Central Semiconductor |
207 |
2N6037 |
Leaded Power Transistor Darlington |
Central Semiconductor |
208 |
2N6038 |
Leaded Power Transistor Darlington |
Central Semiconductor |
209 |
2N6039 |
Leaded Power Transistor Darlington |
Central Semiconductor |
210 |
2N6040 |
Leaded Power Transistor Darlington |
Central Semiconductor |
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