| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N4049 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 182 |
2N4050 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 183 |
2N4051 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 184 |
2N4052 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 185 |
2N4053 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 186 |
2N4072 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
| 187 |
2N4073 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
| 188 |
2N4264 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
| 189 |
2N4265 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
| 190 |
2N4416 |
Silicon N-channel junction field-effect transistor designed for VHF/UHF amplifier applications |
Motorola |
| 191 |
2N4427 |
Epitaxial planar NPN transistor designed for VHF class A, B or C amplifier and oscillator applications |
SGS-ATES |
| 192 |
2N4428 |
Epitaxial planar NPN transistor designed for VHF-UHF class C amplifier output stages in military an industrial communications applications |
SGS-ATES |
| 193 |
2N4854 |
Leaded Small Signal Transistor Dual |
Central Semiconductor |
| 194 |
2N4924 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 195 |
2N4925 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 196 |
2N4926 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 197 |
2N4927 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 198 |
2N4937 |
Leaded Small Signal Transistor Dual |
Central Semiconductor |
| 199 |
2N4938 |
Leaded Small Signal Transistor Dual |
Central Semiconductor |
| 200 |
2N4939 |
Leaded Small Signal Transistor Dual |
Central Semiconductor |
| 201 |
2N4948 |
Silicon annular unijunction transistor designed for military and industrial use |
Motorola |
| 202 |
2N4949 |
Silicon annular unijunction transistor designed for military and industrial use |
Motorola |
| 203 |
2N499 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 204 |
2N499A |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 205 |
2N502 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 206 |
2N502A |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 207 |
2N502B |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 208 |
2N5086 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 209 |
2N5087 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 210 |
2N5088 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
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