No. |
Part Name |
Description |
Manufacturer |
151 |
2N3819_D27Z |
N-Channel RF Amplifier |
Fairchild Semiconductor |
152 |
2N3819_D74Z |
N-Channel RF Amplifier |
Fairchild Semiconductor |
153 |
2N3839 |
Silicon NPN Epitaxial Planar RF Transistor |
RCA Solid State |
154 |
2N3866 |
Silicon NPN overlay epitaxial planar RF transistor |
ICCE |
155 |
2N3866 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
156 |
2N3866 |
Silicon NPN Overlay RF Power Transistor |
RCA Solid State |
157 |
2N3866 |
RF transistor |
Texas Instruments |
158 |
2N3866A |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
159 |
2N3924 |
NPN silicon RF power transistor |
Motorola |
160 |
2N3924 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
161 |
2N3924 |
RF transistor |
Texas Instruments |
162 |
2N3925 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
163 |
2N3926 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
164 |
2N3926 |
RF transistor |
Texas Instruments |
165 |
2N3927 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
166 |
2N3927 |
RF transistor |
Texas Instruments |
167 |
2N3948 |
NPN silicon RF power transistor, ideal for CATV applications or military and industrial equipment |
Motorola |
168 |
2N3950 |
NPN silicon RF power transistor designed for high-power RF amplifier applications |
Motorola |
169 |
2N3950 |
NPN silicon RF power transistor designed for high-power RF amplifier applications |
Motorola |
170 |
2N3961 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
171 |
2N4012 |
High-Power Silicon NPN Overlay RF Transistor |
RCA Solid State |
172 |
2N4030 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
173 |
2N4031 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
174 |
2N4032 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
175 |
2N4033 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
176 |
2N404 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
177 |
2N4040 |
RF transistor |
Texas Instruments |
178 |
2N4041 |
RF transistor |
Texas Instruments |
179 |
2N4127 |
RF transistor |
Texas Instruments |
180 |
2N4128 |
RF transistor |
Texas Instruments |
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