No. |
Part Name |
Description |
Manufacturer |
91 |
1SV273 |
RF Varactor Diodes |
TOSHIBA |
92 |
1SV312 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications |
TOSHIBA |
93 |
20L08 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
94 |
20L15 |
2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
95 |
2100 |
2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
96 |
23Z247SMD |
2 Watt Pulse Electrostatically Shielded, 500 mW Pulse, RF Pulse and Control Transformers |
Pulse Engineering |
97 |
2N1302 |
NPN Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
98 |
2N1303 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
99 |
2N1304 |
NPN Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
100 |
2N1305 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
101 |
2N1306 |
NPN Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
102 |
2N1307 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
103 |
2N1308 |
NPN Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
104 |
2N1309 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
105 |
2N1491 |
NPN triple-diffused silicon RF Power Transistor |
RCA Solid State |
106 |
2N1492 |
NPN triple-diffused silicon RF Power Transistor |
RCA Solid State |
107 |
2N1493 |
NPN triple-diffused silicon RF Power Transistor |
RCA Solid State |
108 |
2N1613 |
Silicon NPN Planar Transistor for RF amplifiers and high speed switches |
AEG-TELEFUNKEN |
109 |
2N1613 |
Silicon NPN planar transistor for high speed switching and RF amplifiers |
AEG-TELEFUNKEN |
110 |
2N2102 |
1.000W RF NPN Metal Can Transistor. 65V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
111 |
2N2193 |
Silicon NPN planar epitaxial transistor for high speed switchings and RF amplifiers |
AEG-TELEFUNKEN |
112 |
2N2218 |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
113 |
2N2218A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
114 |
2N2219 |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
115 |
2N2219A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
116 |
2N2221 |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
117 |
2N2221A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
118 |
2N2222 |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
119 |
2N2222A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
120 |
2N2631 |
NPN triple-diffused planar silicon RF Power Transistor |
RCA Solid State |
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