No. |
Part Name |
Description |
Manufacturer |
91 |
2N1308 |
NPN Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
92 |
2N1309 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
93 |
2N1491 |
NPN triple-diffused silicon RF Power Transistor |
RCA Solid State |
94 |
2N1492 |
NPN triple-diffused silicon RF Power Transistor |
RCA Solid State |
95 |
2N1493 |
NPN triple-diffused silicon RF Power Transistor |
RCA Solid State |
96 |
2N1613 |
Silicon NPN planar transistor for high speed switching and RF amplifiers |
AEG-TELEFUNKEN |
97 |
2N2102 |
1.000W RF NPN Metal Can Transistor. 65V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
98 |
2N2193 |
Silicon NPN planar epitaxial transistor for high speed switchings and RF amplifiers |
AEG-TELEFUNKEN |
99 |
2N2218 |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
100 |
2N2218A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
101 |
2N2219 |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
102 |
2N2219A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
103 |
2N2221 |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
104 |
2N2221A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
105 |
2N2222 |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
106 |
2N2222A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
107 |
2N2631 |
NPN triple-diffused planar silicon RF Power Transistor |
RCA Solid State |
108 |
2N2857 |
RF NPN Transistor |
Microsemi |
109 |
2N2857 |
NPN silicon RF small-signal transistor |
Motorola |
110 |
2N2857 |
Double-diffused epitaxial planar silicon RF power transistor |
RCA Solid State |
111 |
2N2876 |
NPN triple-diffused planar silicon RF Power Transistor |
RCA Solid State |
112 |
2N3118 |
Triple-diffused planar transistor of the silicon NPN type intended for use in RF amplifiers in military and industrial HF and VHF communication equipment |
RCA Solid State |
113 |
2N3119 |
High-Power Silicon NPN Planar RF Tranzistor |
RCA Solid State |
114 |
2N3137 |
Epitaxial planar NPN transistor, designed for application as a Class-C, RF power amplifier |
SGS-ATES |
115 |
2N3137T |
RF transistor |
Texas Instruments |
116 |
2N3229 |
NPN RF power transistor |
RCA Solid State |
117 |
2N3229 |
RF transistor |
Texas Instruments |
118 |
2N3283 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
119 |
2N3284 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
120 |
2N3285 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
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