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Datasheets for RF4

Datasheets found :: 475
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |
No. Part Name Description Manufacturer
151 IRF420 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
152 IRF420 2.2A and 2.5A/ 450V and 500V/ 3.0 and 4.0 Ohm/ N-Channel Power MOSFETs Intersil
153 IRF420 Trans MOSFET N-CH 500V 2.5A 3-Pin(2+Tab) TO-204AA New Jersey Semiconductor
154 IRF420 N-CHANNEL POWER MOSFETS Samsung Electronic
155 IRF420-423 N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V Fairchild Semiconductor
156 IRF421 N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V Fairchild Semiconductor
157 IRF421 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
158 IRF421 2.2A and 2.5A/ 450V and 500V/ 3.0 and 4.0 Ohm/ N-Channel Power MOSFETs Intersil
159 IRF421 Trans MOSFET N-CH 450V 2.5A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
160 IRF421 N-CHANNEL POWER MOSFETS Samsung Electronic
161 IRF422 N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V Fairchild Semiconductor
162 IRF422 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
163 IRF422 2.2A and 2.5A/ 450V and 500V/ 3.0 and 4.0 Ohm/ N-Channel Power MOSFETs Intersil
164 IRF422 Trans MOSFET N-CH 500V 2A 3-Pin(3+Tab) TO-220AB New Jersey Semiconductor
165 IRF422 N-CHANNEL POWER MOSFETS Samsung Electronic
166 IRF422R Trans MOSFET N-CH 500V 2A 3-Pin(3+Tab) TO-220AB New Jersey Semiconductor
167 IRF423 N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V Fairchild Semiconductor
168 IRF423 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
169 IRF423 2.2A and 2.5A/ 450V and 500V/ 3.0 and 4.0 Ohm/ N-Channel Power MOSFETs Intersil
170 IRF423 Trans MOSFET N-CH 450V 2A 3-Pin(3+Tab) TO-220AB New Jersey Semiconductor
171 IRF423 N-CHANNEL POWER MOSFETS Samsung Electronic
172 IRF430 N-Channel Power MOSFETs/ 4.5 A/ 450V/500V Fairchild Semiconductor
173 IRF430 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
174 IRF430 500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package International Rectifier
175 IRF430 4.5A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET Intersil
176 IRF430 Trans MOSFET N-CH 500V 4.5A 3-Pin(2+Tab) TO-204AA New Jersey Semiconductor
177 IRF430 N-CHANNEL POWER MOSFETS Samsung Electronic
178 IRF430 N-CHANNEL POWER MOSFET SemeLAB
179 IRF430-433 N-Channel Power MOSFETs/ 4.5 A/ 450V/500V Fairchild Semiconductor
180 IRF430R Trans MOSFET N-CH 500V 4.5A 3-Pin(2+Tab) TO-204AA New Jersey Semiconductor


Datasheets found :: 475
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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