| No. |
Part Name |
Description |
Manufacturer |
| 211 |
IRF442R |
Trans MOSFET N-CH 500V 7A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 212 |
IRF443 |
N-Channel Power MOSFETs/ 8A/ 450 V/500V |
Fairchild Semiconductor |
| 213 |
IRF443 |
7A and 8A, 450V and 500V, 0.85 and 1.1 Ohm, N-Channel Power MOSFETs |
Intersil |
| 214 |
IRF443 |
Trans MOSFET N-CH 450V 7A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 215 |
IRF443 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 216 |
IRF450 |
13A/ 500V/ 0.400 Ohm/ N-Channel Power MOSFET |
Fairchild Semiconductor |
| 217 |
IRF450 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 13A. |
General Electric Solid State |
| 218 |
IRF450 |
500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
| 219 |
IRF450 |
13A/ 500V/ 0.400 Ohm/ N-Channel Power MOSFET |
Intersil |
| 220 |
IRF450 |
N Channel MOSFET |
Microsemi |
| 221 |
IRF450 |
Trans MOSFET N-CH 500V 13A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 222 |
IRF450 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 223 |
IRF450 |
N-CHANNEL POWER MOSFET |
SemeLAB |
| 224 |
IRF450R |
Trans MOSFET N-CH 500V 13A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 225 |
IRF451 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 13A. |
General Electric Solid State |
| 226 |
IRF451 |
11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs |
Intersil |
| 227 |
IRF451 |
Trans MOSFET 450V 13A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 228 |
IRF451 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 229 |
IRF452 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 230 |
IRF452 |
11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs |
Intersil |
| 231 |
IRF452 |
Trans MOSFET 500V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 232 |
IRF452 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 233 |
IRF452R |
Trans MOSFET 500V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 234 |
IRF453 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 235 |
IRF453 |
11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs |
Intersil |
| 236 |
IRF453 |
Trans MOSFET 450V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 237 |
IRF453 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 238 |
IRF460 |
500V Single N-Channel Hi-Rel MOSFET in a TO-204AE package |
International Rectifier |
| 239 |
IRF460 |
Trans MOSFET N-CH 500V 21A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 240 |
IRF460 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
SemeLAB |
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