No. |
Part Name |
Description |
Manufacturer |
151 |
CMOS SDRAM |
CMOS SDRAM Device Operations |
Samsung Electronic |
152 |
CW5322X |
SDH104 |
Samsung Electronic |
153 |
DA22497 |
FM FRONT END |
Samsung Electronic |
154 |
DA22497D |
FM FRONT END |
Samsung Electronic |
155 |
DDRSDRAM |
DDR SDRAM Specification Version 0.61 |
Samsung Electronic |
156 |
DDRSDRAM1111 |
DDR SDRAM Specification Version 1.0 |
Samsung Electronic |
157 |
DIRECT RDRAM |
Direct RDRAM� Device Operation |
Samsung Electronic |
158 |
DISK TR |
Package dimensions |
Samsung Electronic |
159 |
DS_K1S161611A |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
160 |
DS_K1S16161CA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
161 |
DS_K4D263238D |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
162 |
DS_K4S161622D |
1M x 16 SDRAM |
Samsung Electronic |
163 |
DS_K4S161622E |
1M x 16 SDRAM |
Samsung Electronic |
164 |
DS_K6F1016U4C |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
165 |
DS_K6F2008U2E |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
166 |
DS_K6F2016U4E |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
167 |
DS_K6F3216T6M |
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
168 |
DS_K6F4016U6G |
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
169 |
DS_K6F8016U6B |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
170 |
DS_K6F8016U6C |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
171 |
DS_K6X8008C2B |
1Mx8 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
172 |
DS_K6X8008TBN |
CMOS SRAM |
Samsung Electronic |
173 |
DS_K6X8016C3B |
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM |
Samsung Electronic |
174 |
DS_K7A803600B |
256Kx36 & 512Kx18 Synchronous SRAM |
Samsung Electronic |
175 |
DS_K7B803625B |
256Kx36 & 512Kx18-Bit Synchronous Burst SRAM |
Samsung Electronic |
176 |
DS_K7M323625M |
1Mx36 & 2Mx18 Flow-Through NtRAM |
Samsung Electronic |
177 |
DS_K7M803625B |
256Kx36 & 512Kx18-Bit Flow Through NtRAM |
Samsung Electronic |
178 |
DS_K7N163601A |
512Kx36 & 1Mx18 Pipelined NtRAM |
Samsung Electronic |
179 |
DS_K7N323601M |
1Mx36 & 2Mx18-Bit Pipelined NtRAM |
Samsung Electronic |
180 |
DS_K7N803601B |
256Kx36 & 512Kx18-Bit Pipelined NtRAM |
Samsung Electronic |
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