| No. |
Part Name |
Description |
Manufacturer |
| 271 |
IRFP9132 |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 272 |
IRFP9132 |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 273 |
IRFP9132 |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 274 |
IRFP9133 |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 275 |
IRFP9133 |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 276 |
IRFP913X |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 277 |
IRFP9140 |
100 V, P-channel power MOSFET |
Samsung Electronic |
| 278 |
IRFP9141 |
60 V, P-channel power MOSFET |
Samsung Electronic |
| 279 |
IRFP9142 |
100 V, P-channel power MOSFET |
Samsung Electronic |
| 280 |
IRFP9143 |
60 V, P-channel power MOSFET |
Samsung Electronic |
| 281 |
IRFP9230 |
200 V, P-channel power MOSFET |
Samsung Electronic |
| 282 |
IRFP9231 |
150 V, P-channel power MOSFET |
Samsung Electronic |
| 283 |
IRFP9232 |
200 V, P-channel power MOSFET |
Samsung Electronic |
| 284 |
IRFP9233 |
150 V, P-channel power MOSFET |
Samsung Electronic |
| 285 |
IRFP9240 |
200 V, P-channel power MOSFET |
Samsung Electronic |
| 286 |
IRFP9241 |
150 V, P-channel power MOSFET |
Samsung Electronic |
| 287 |
IRFP9242 |
200 V, P-channel power MOSFET |
Samsung Electronic |
| 288 |
IRFP9243 |
150 V, P-channel power MOSFET |
Samsung Electronic |
| 289 |
IRFR010 |
N Channel Power MOSFETs |
Samsung Electronic |
| 290 |
IRLZ40 |
N-CHANNEL LOGIC LEVEL MOSFET |
Samsung Electronic |
| 291 |
IRLZ44A |
ADVANCED POWER MOSFET |
Samsung Electronic |
| 292 |
ISL9860PF2 |
8A, 600V Stealth Diode |
Samsung Electronic |
| 293 |
K164 |
Temperaturmessung Bedrahtete Scheiben |
Siemens |
| 294 |
K1B6416B6C |
4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory |
Samsung Electronic |
| 295 |
K1S161611A |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 296 |
K1S161611A-I |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 297 |
K1S16161CA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 298 |
K1S16161CA-I |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 299 |
K1S1616BCA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 300 |
K1S321611C |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| | | |
