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Datasheets for TRANSIS

Datasheets found :: 96941
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No. Part Name Description Manufacturer
151 1416-100 100 W, 50 V, 1400-1600 MHz common base transistor GHz Technology
152 1416-100 High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications SGS Thomson Microelectronics
153 1416-200 High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications SGS Thomson Microelectronics
154 1416GN-120E GaN Transistors Microsemi
155 1416GN-120EL GaN Transistors Microsemi
156 1416GN-120EP GaN Transistors Microsemi
157 1416GN-600V GaN Transistors Microsemi
158 1417 Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Alternative Layout to Model 1413 Vishay
159 1417-12 1.4-1.7GHz 12W 24V NPN silicon transistor designed for microwave applications SGS Thomson Microelectronics
160 1417-12A 12 W, 28 V, 1400-1700 MHz common base transistor GHz Technology
161 1417-25 1.4-1.7GHz 25W 24V NPN RF transistor for microwave applications SGS Thomson Microelectronics
162 1417-6A 6 W, 28 V, 1400-1700 MHz common base transistor GHz Technology
163 1419 Bulk Metal Foil Technology, 10 Pin Transistor Outline Hermetic Resistor Network, Largest R Capacity of the Smaller TO Series Vishay
164 1421 Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration Vishay
165 1422 Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration Vishay
166 1474 Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz SGS Thomson Microelectronics
167 1496-3 24V 55W Class C epitaxial silicon NPN planar transistor 900-960MHz SGS Thomson Microelectronics
168 1511-8 Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz SGS Thomson Microelectronics
169 1516-35 35 W, 28 V, 1450-1550 MHz common base transistor GHz Technology
170 1517-035 High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems SGS Thomson Microelectronics
171 1526-1 Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications SGS Thomson Microelectronics
172 1526-8 Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications SGS Thomson Microelectronics
173 1527-8 Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications SGS Thomson Microelectronics
174 1528-6 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS SGS Thomson Microelectronics
175 1528-6 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS ST Microelectronics
176 1528-8 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS SGS Thomson Microelectronics
177 1528-8 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS ST Microelectronics
178 152NU70 High-Frequency NPN Transistor Tesla Elektronicke
179 1530-1 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS SGS Thomson Microelectronics
180 1530-1 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS ST Microelectronics


Datasheets found :: 96941
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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