| No. |
Part Name |
Description |
Manufacturer |
| 181 |
1530-8 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
| 182 |
1530-8 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
ST Microelectronics |
| 183 |
1534-1 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
| 184 |
1534-1 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
ST Microelectronics |
| 185 |
1536-3 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 186 |
1536-8 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 187 |
1538-8 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
| 188 |
1538-8 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
ST Microelectronics |
| 189 |
153NU70 |
High-Frequency NPN Transistor |
Tesla Elektronicke |
| 190 |
154NU70 |
High-Frequency NPN Transistor |
Tesla Elektronicke |
| 191 |
155NU70 |
High-Frequency NPN Transistor |
Tesla Elektronicke |
| 192 |
156NU70 |
High-Frequency NPN Transistor |
Tesla Elektronicke |
| 193 |
15C02CH |
NPN EPITAXIAL SILICON TRANSISTOR |
SANYO |
| 194 |
1616-050 |
High power Class C, CW transistor designed for 1.6GHz satellite communications applications including GPS and INMARSAT |
SGS Thomson Microelectronics |
| 195 |
1617AB35 |
35 W, 25 V, 1600-1700 MHz common emitter transistor |
GHz Technology |
| 196 |
1617AB5 |
5 W, 26 V, 1600-1700 MHz common emitter transistor |
GHz Technology |
| 197 |
1617AM10 |
10 W, 18 V, 1500-1800 MHz common emitter transistor |
GHz Technology |
| 198 |
1618-35 |
35 W, 28 V, 1600-1800 MHz common base transistor |
GHz Technology |
| 199 |
1718-32L |
32 W, 24 V, 1750-1850 MHz common base transistor |
GHz Technology |
| 200 |
1719-2 |
2 W, 2 V, 1700-1900 MHz common base transistor |
GHz Technology |
| 201 |
1719-20 |
20 W, 28 V, 1700-1900 MHz common base transistor |
GHz Technology |
| 202 |
1719-35 |
35 W, 28 V, 1725-1850 MHz common base transistor |
GHz Technology |
| 203 |
1719-8 |
8 W, 28 V, 1700-1900 MHz common base transistor |
GHz Technology |
| 204 |
1720-10 |
1.7-2.0GHz 10W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 205 |
1720-13 |
1.7-2.0GHz 13W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 206 |
1720-20 |
1.7-2.0GHz 20W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 207 |
1720-25 |
1.7-2.0GHz 25W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 208 |
1720-3 |
1.7-2.0GHz 3W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 209 |
1720-6 |
1.7-2.0GHz 6W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 210 |
174CQY |
Solid-state photo-relays consisting of a GaAs electroluminiscent diode and a silicon n-p-n photo-transistor |
Mullard |
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