| No. |
Part Name |
Description |
Manufacturer |
| 1591 |
CM100DU-24F |
Trench Gate Design Dual IGBTMOD�� 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 1592 |
CM100HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1593 |
CM100TJ-12F |
Trench Gate Design 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 1594 |
CM100TJ-24F |
Trench Gate Design Six IGBTMOD�� 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 1595 |
CM100TU-12F |
Trench Gate Design Six IGBTMOD�� 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 1596 |
CM100TU-24F |
Trench Gate Design Six IGBTMOD�� 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 1597 |
CM1200HA-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1598 |
CM1200HA-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1599 |
CM1200HA-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1600 |
CM1200HB-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1601 |
CM1200HB-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1602 |
CM1200HC-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1603 |
CM150DU-12F |
Trench Gate Design Dual IGBTMOD�� 150 Amperes/600 Volts |
Powerex Power Semiconductors |
| 1604 |
CM150DU-24F |
Trench Gate Design Dual IGBTMOD�� 150 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 1605 |
CM150TJ-12F |
Trench Gate Design Six IGBTMOD�� 150 Amperes/600 Volts |
Powerex Power Semiconductors |
| 1606 |
CM150TU-12F |
Trench Gate Design Six IGBTMOD�� 150 Amperes/600 Volts |
Powerex Power Semiconductors |
| 1607 |
CM200DU-12F |
Trench Gate Design Dual IGBTMOD�� 200 Amperes/600 Volts |
Powerex Power Semiconductors |
| 1608 |
CM200DU-24F |
Trench Gate Design Dual IGBTMOD�� 200 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 1609 |
CM200TU-12F |
Trench Gate Design Six IGBTMOD�� 200 Amperes/600 Volts |
Powerex Power Semiconductors |
| 1610 |
CM200TU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1611 |
CM200TU-5F |
Trench Gate Design Six IGBTMOD�� 200 Amperes/250 Volts |
Powerex Power Semiconductors |
| 1612 |
CM300DU-12F |
Trench Gate Design Dual IGBTMOD�� 300 Amperes/600 Volts |
Powerex Power Semiconductors |
| 1613 |
CM300DU-24F |
Trench Gate Design Dual IGBTMOD�� 300 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 1614 |
CM350DU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1615 |
CM350DU-5F |
Trench Gate Design Dual IGBTMOD�� 350 Amperes/250 Volts |
Powerex Power Semiconductors |
| 1616 |
CM400DU-12F |
Trench Gate Design Dual IGBTMOD�� 400 Amperes/600 Volts |
Powerex Power Semiconductors |
| 1617 |
CM400DU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1618 |
CM400DU-5F |
Trench Gate Design Dual IGBTMOD�� 400 Amperes/250 Volts |
Powerex Power Semiconductors |
| 1619 |
CM400DY-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1620 |
CM400DY-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
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