| No. |
Part Name |
Description |
Manufacturer |
| 1621 |
CM400HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1622 |
CM400HB-90H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1623 |
CM400HU-24F |
Trench Gate Design Single IGBTMOD�� 400 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 1624 |
CM450HA-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1625 |
CM450HA-5F |
Trench Gate Design Single IGBTMOD�� 450 Amperes/250 Volts |
Powerex Power Semiconductors |
| 1626 |
CM50DU-24F |
Trench Gate Design Dual IGBTMOD�� 50 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 1627 |
CM50TJ-24F |
Trench Gate Design Six IGBTMOD�� 50 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 1628 |
CM50TU-24F |
Trench Gate Design Six IGBTMOD�� 50 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 1629 |
CM600DU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1630 |
CM600DY-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1631 |
CM600E2Y-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1632 |
CM600HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1633 |
CM600HA-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1634 |
CM600HA-5F |
Trench Gate Design Single IGBTMOD�� 600 Amperes/250 Volts |
Powerex Power Semiconductors |
| 1635 |
CM600HB-90H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1636 |
CM600HN-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1637 |
CM600HU-12F |
Trench Gate Design Single IGBTMOD�� 600 Amperes/600 Volts |
Powerex Power Semiconductors |
| 1638 |
CM600HU-24F |
Trench Gate Design Single IGBTMOD�� 600 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 1639 |
CM75DU-12F |
Trench Gate Design Dual IGBTMOD�� 75 Amperes/600 Volts |
Powerex Power Semiconductors |
| 1640 |
CM75DU-24F |
Trench Gate Design Dual IGBTMOD�� 75 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 1641 |
CM75TJ-24F |
Trench Gate Design Six IGBTMOD�� 75 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 1642 |
CM75TU-12F |
Trench Gate Design Six IGBTMOD�� 75 Amperes/600 Volts |
Powerex Power Semiconductors |
| 1643 |
CM75TU-24F |
Trench Gate Design Six IGBTMOD�� 75 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 1644 |
CM800DZ-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1645 |
CM800E2Z-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1646 |
CM800HA-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1647 |
CM800HA-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1648 |
CM800HA-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1649 |
CM800HB-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1650 |
CM800HB-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
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